|
|
IRFSL11N50AのメーカーはIRFです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFSL11N50A |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | IRF | ||
ロゴ | |||
このページの下部にプレビューとIRFSL11N50Aダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD- 91847A
IRFSL11N50A
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Fast Switching
l Ease of Paraleling
l Simple Drive Requirements
HEXFET® Power MOSFET
D
VDSS = 500V
RDS(on) = 0.55Ω
G
ID = 11A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient
T O -262
Max.
11
7.0
44
190
1.3
± 30
390
11
19
4.1
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C
1
9/2/99
1 Page 100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRFSL11N50A
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 175 °C
1
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10
TJ = 175° C
TJ = 25° C
1
0.1
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 11A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFSL11N50A
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1000
800
TOP
BOTTOM
ID
4.5A
7.8A
11A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
660
640
620
600
580
560
0
2 4 6 8 10
I av , Avalanche Current (A)
A
12
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRFSL11N50A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFSL11N50A | HEXFET Power MOSFET | IRF |
IRFSL11N50A | Power MOSFET ( Transistor ) | Vishay |
IRFSL11N50APBF | HEXFET Power MOSFET | International Rectifier |