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IRFR9120 の電気的特性と機能

IRFR9120のメーカーはIntersilです、この部品の機能は「P Channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFR9120
部品説明 P Channel Power MOSFET
メーカ Intersil
ロゴ Intersil ロゴ 




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IRFR9120 Datasheet, IRFR9120 PDF,ピン配置, 機能
Data Sheet
IRFR9120, IRFU9120
July 1999 File Number 3987.4
5.6A, 100V, 0.600 Ohm, P-Channel Power
MOSFETs
These advanced power MOSFETs are designed, tested, and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. They are
P-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate-drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17501.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR9120
TO-252AA
IF9120
IRFU9120
TO-251AA
IF9120
NOTE: When ordering use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR91209A.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Features
• 5.6A, 100V
• rDS(ON) = 0.600
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
4-83
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 Page





IRFR9120 pdf, ピン配列
IRFR9120, IRFU9120
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-6
-5
-4
-3
-2
-1
0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Zθ JC + TC
100
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
-30
-10 100µs
1ms
OPERATION IN THIS
-1 AREA MAY BE
LIMITED BY rDS(ON)
10ms
100ms
DC
TC = 25oC
TJ = MAX RATED
-0.1
-1
-10
-100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-102
VGS = -20V
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
=
I25
-1--5---0-1---2-–--5--T----C--
-101
VGS = -10V
-100
10-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10-4
10-3
10-2
10-1
t, PULSE WIDTH (ms)
TC = 25oC
100 101
FIGURE 5. PEAK CURRENT CAPABILITY
4-85


3Pages


IRFR9120 電子部品, 半導体
IRFR9120, IRFU9120
PSPICE Electrical Model
.SUBCKT IRFU9120 2 1 3
REV 9/16/94
CA 12 8 618.9e-12
CB 15 14 633.9e-12
CIN 6 8 441.1e-12
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -127.38
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.609e-9
LSOURCE 3 7 2.609e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
10
DPLCAP
RSCL2
5
RSCL1
5
51 ESCL
-6
ESG
+
8
GATE
RGATE
9
EVTO
-
18
1 LGATE
20 8
RIN
16
VTO
-
6
RDRAIN
21
MOS1
CIN
8
17
EBREAK 18
MOS2
11
DBREAK
RSOURCE
+
-
LDRAIN
2
DRAIN
DBODY
LSOURCE
3
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 245.6e-3
RGATE 9 20 2.69
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 123.96e-3
RVTO 18 19 RVTOMOD 1
S1A
12 13
8
CA S1B
13
S2A
14
13
S2B
15
+6
EGS
-
8
CB
+
EDS
-
14
5
8
7 SOURCE
RBREAK
17 18
RVTO
IT 19
-
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.77
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/13.2,6))}
.MODEL DBDMOD D (IS=5.1e-14 RS=9.4e-2 TRS1=-2.2e-3 TRS2=-5.2e-6 CJO=6.43e-10 TT=9.7e-8)
.MODEL DBKMOD D (RS=1.45 TRS1=3.84e-4 TRS2=-9.83e-6)
.MODEL DPLCAPMOD D (CJO=235e-12 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.49 KP=1.58 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.01e-3 TC2=1.05e-6)
.MODEL RDSMOD RES (TC1=6.23e-3 TC2=1.23e-5)
.MODEL RSCLMOD RES (TC1=2.05e-3 TC2=-0.35e-5)
.MODEL RVTOMOD RES (TC1=-3.46e-3 TC2=3.33e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=6.3 VOFF=4.3)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.3 VOFF=6.3)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.0 VOFF=-4.0)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.0 VOFF=1.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Tem-
perature Options; written by William J. Hepp and C. Frank Wheatley.
4-88

6 Page



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