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PDF STD2NA50 Data sheet ( Hoja de datos )
| Número de pieza | STD2NA50 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
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TYPE
STD2NA50
STD2NA50
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
VDSS
500 V
RDS(on)
<4Ω
ID
2.2 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 3.25 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
s MEDIUM CURRENT, HIGH SPEED
SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
3
2
1
IPAK
TO-251
(Suffix "-1")
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1996
Value
500
500
± 30
2.2
1.4
8.8
45
0.36
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/6
1 page  
DIM.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
STD2NA50
TO-252 (DPAK) MECHANICAL DATA
MIN.
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
6.4
4.4
9.35
0.6
mm
TYP.
0.8
MAX.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
6.6
4.6
10.1
1
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
0.023
inch
TYP.
0.031
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
H
DETAIL "A"
L2 D
DETAIL "A"
L4
0068772-B
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STD2NA50.PDF ] | |
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