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IRFP254B の電気的特性と機能

IRFP254BのメーカーはFairchildです、この部品の機能は「250V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFP254B
部品説明 250V N-Channel MOSFET
メーカ Fairchild
ロゴ Fairchild ロゴ 




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IRFP254B Datasheet, IRFP254B PDF,ピン配置, 機能
November 2001
IRFP254B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
• 25A, 250V, RDS(on) = 0.14@VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G!
G DS
TO-3P
IRFP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
D
!
◀▲
!
S
IRFP254B
250
25
15.9
100
± 30
700
25
22.1
5.5
221
1.79
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.56
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. C, November 2001

1 Page





IRFP254B pdf, ピン配列
Typical Characteristics
102
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom: 5.0 V
101
100
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.8
0.6
VGS = 10V
0.4 VGS = 20V
0.2
Note : TJ = 25
0.0
0
20 40 60 80 100
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
8000
6000
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
4000
2000
C
iss
C
oss
C
rss
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
102
101
150oC
25oC
100
10-1
2
-55oC
Notes :
1.
2.
2V5DS0μ=s40PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
102
101
100
0.2
15025
Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 50V
10 DS
VDS = 125V
8 VDS = 200V
6
4
2
Note : ID = 25 A
0
0 20 40 60 80 100
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. C, November 2001


3Pages


IRFP254B 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2001 Fairchild Semiconductor Corporation
Rev. C, November 2001

6 Page



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