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IRG4BC30U の電気的特性と機能

IRG4BC30UのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4BC30U
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4BC30U Datasheet, IRG4BC30U PDF,ピン配置, 機能
PD - 91452E
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30U
UltraFast Speed IGBT
Features
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
23
12
92
92
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
2 (0.07)
Max.
1.2
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000

1 Page





IRG4BC30U pdf, ピン配列
IRG4BC30U
35
30
25
20 S qu are wave:
60 % of rated
15 v oltag e
I
10
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power D is sipation = 21W
Trian gu la r w a ve:
I
C lam p vo lta ge:
80% of rated
5 Ideal diodes
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
100 100
TJ = 25°C
TJ = 150°C
TJ = 150°C
10 10
TJ = 2 5 °C
11
0.1
0.1
VGE = 15V
20µs PU LSE W ID TH A
1 10
VCE , C o lle ctor-to -Em itter Vo ltag e (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
V CC = 10V
0.1 5µs PU LSE W IDTH A
5 6 7 8 9 10 11 12
VG E , G a te -to -E m itte r V o lta g e (V )
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4BC30U 電子部品, 半導体
IRG4BC30U
1.6
RG = 23
T J = 150°C
V CC = 480V
V GE = 15V
1.2
0.8
1000
VGGE E= 2 0V
TJ = 125°C
100
SAFE OPERATING AREA
10
0.4
0.0
0
A
10 20 30
IC , C olle ctor-to-Em itte r C u rrent (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1
0.1
1 10 100 1000
VC E , Collector-to-Em itter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



ページ 合計 : 8 ページ
 
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[ IRG4BC30U データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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