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IRG4BC30U-SのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRG4BC30U-S |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG4BC30U-Sダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 91803
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30U-S
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard D2Pak package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
D 2Pak
Max.
600
23
12
92
92
± 20
10
100
42
-55 to + 150
Thermal Resistance
RqJC
RqJA
Parameter
Junction-to-Case
Junction-to-Ambient, ( PCB Mounted,steady-state)*
Typ.
–––
–––
Max.
1.2
40
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
www.irf.com
Units
V
A
V
mJ
W
Units
°C/W
1
1 Page IRG4BC30U-S
6.0
5.0
4.0
Square wave:
3.0 60% of rated
voltage
2.0
For both:
Duty cycle: 50%
TJ = 125°C
Tsink= 55°C
Gate drive as specified
Power Dissipation = 1.75W
Triangular wave:
Clamp voltage:
80% of rated
1.0 Ideal diodes
0.0
0.1
1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
100 100
TJ = 25°C
TJ = 150°C
TJ = 150°C
10 10
TJ = 25°C
11
0.1
0.1
VGE = 15V
20µs PU LSE W ID TH A
1 10
VCE , Collector-to-Em itter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
V CC = 10V
0.1 5µs PULSE W IDTH A
5 6 7 8 9 10 11 12
VG E , G a te -to -E m itte r V o lta g e (V )
Fig. 3 - Typical Transfer Characteristics
3
3Pages IRG4BC30U-S
1.6
RG = 23 Ω
T J = 150°C
VCC = 480V
VGE = 15V
1.2
0.8
1000
VGGE E= 20V
TJ = 125°C
100
SAFE OPERATING AREA
10
0.4
0.0
0
A
10 20 30
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1
0.1
1 10 100 1000
VCE , Collector-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
6 www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRG4BC30U-S データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
IRG4BC30U-S | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |