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PDF IRG4BC30UD Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC30UD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD 91453B
IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
23
12
92
92
12
92
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
1.2
2.5
------
80
------
Units
°C/W
g (oz)
1
4/17/00
1 page  
2000
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SH OR TE D
C res = C gc
1600
C oes = C ce + C gc
C ies
1200
800 Coes
400 Cres
0A
1 10 100
VCE, C ollector-to-Em itter Voltage (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.60
VCC = 480V
V GE = 15V
T J = 25°C
0.58 I C = 12A
0.56
0.54
0.52
0.50
0
10 20 30 40 50
R G , Gate Resistance ( Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
IRG4BC30UD
20
VCE = 400V
IC = 12A
16
12
8
4
0A
0 10 20 30 40 50
Qg , Total G ate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
R G = 23Ω
V GE = 15V
V CC = 480V
1
IC = 24A
I C = 12A
I C = 6.0A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC30UD.PDF ] | |
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