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IRG4BC30W の電気的特性と機能

IRG4BC30WのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4BC30W
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4BC30W Datasheet, IRG4BC30W PDF,ピン配置, 機能
PD - 91629A
IRG4BC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
C
G
E
n-channel
VCES = 600V
VCE(on) max. = 2.70V
@VGE = 15V, IC = 12A
TO-220AB
Max.
600
23
12
92
92
± 20
180
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.50
–––
1.44
Max.
1.2
–––
80
–––
Units
°C/W
g
www.irf.com
1
4/24/2000

1 Page





IRG4BC30W pdf, ピン配列
IRG4BC30W
40
30
Square wave:
20 60 % of ra ted
voltage
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as s pec ified
Power D is sipation = 21W
T ria ngu la r w av e:
C lamp voltage:
80% of rated
10
Ideal diodes
0
0.1
1
10
f, Frequenc y (k Hz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
100
TJ = 150 °C
10
TJ = 25 °C
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150 °C
10
TJ = 25 °C
1
0.1
5.0
VCC = 50V
5µs PULSE WIDTH
6.0 7.0 8.0 9.0 10.0
VGE, Gate-to-Emitter Voltage (V)
11.0
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4BC30W 電子部品, 半導体
IRG4BC30W
1.5 RG = O2h3m
T J = 150 °C
VCC = 480V
VGE = 15V
1.0
0.5
1000
VGGE E= 2 0V
TJ = 125°C
100
SAFE OPERATING AREA
10
1
0.0
0
5 10 15 20 25
I C , Collector-to-emitter Current (A)
30
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
0.1
1 10 100 1000
VC E , Collector-to-Em itter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



ページ 合計 : 8 ページ
 
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