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PDF MC33153 Data sheet ( Hoja de datos )

Número de pieza MC33153
Descripción SINGLE IGBT GATE DRIVER
Fabricantes Motorola Semiconductors 
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Single IGBT Gate Driver
The MC33153 is specifically designed as an IGBT driver for high power
applications that include ac induction motor control, brushless dc motor
control and uninterruptable power supplies. Although designed for driving
discrete and module IGBTs, this device offers a cost effective solution for
driving power MOSFETs and Bipolar Transistors. Device protection features
include the choice of desaturation or overcurrent sensing and undervoltage
detection. These devices are available in dual–in–line and surface mount
packages and include the following features:
High Current Output Stage: 1.0 A Source/2.0 A Sink
Protection Circuits for Both Conventional and Sense IGBTs
Programmable Fault Blanking Time
Protection against Overcurrent and Short Circuit
Undervoltage Lockout Optimized for IGBT’s
Negative Gate Drive Capability
Cost Effectively Drives Power MOSFETs and Bipolar Transistors
Order this document by MC33153/D
MC33153
SINGLE IGBT
GATE DRIVER
SEMICONDUCTOR
TECHNICAL DATA
8
1
P SUFFIX
PLASTIC PACKAGE
CASE 626
VCC
Fault
Output 7
VEE
VCC
Representative Block Diagram
Short Circuit
Latch S
Q
R
Overcurrent
Latch S
Q
R
VCC
6
VCC
Short Circuit
Comparator
Overcurrent
Comparator
130 mV
65 mV
VCC
270 µA
Fault Blanking/
Desaturation
Comparator
6.5 V
VCC
Current
Sense
1 Input
VEE Kelvin
VCC 2 Gnd
Fault
8 Blanking/
Desaturation
VEE Input
VCC
Output
Stage
Input
4
VEE
VCC
Under
Voltage
Lockout
100 k
Drive
5 Output
VEE
12 V/
11 V
3 VEE
This device contains 133 active transistors.
8
1
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
PIN CONNECTIONS
Current Sense
Input
1
Kelvin Gnd 2
VEE 3
Input 4
8
Fault Blanking/
Desaturation Input
7 Fault Output
6 VCC
5 Drive Output
(Top View)
ORDERING INFORMATION
Device
Operating
Temperature Range
Package
MC33153D
MC33153P TA = –40° to +105°C
SO–8
DIP–8
MOTOROLA ANALOG IC DEVICE DATA
© Motorola, Inc. 1998
Rev 2
1

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MC33153 pdf
MC33153
Figure 9. Drive Output Voltage
versus Current Sense Input Voltage
16
14 VCC = 15 V
12
VPin 4 = 0 V
VPin 8 > 7.0 V
10 TA = 25°C
8.0
6.0
4.0
2.0
0
50 55 60 65 70 75 80
VPin 1, CURRENT SENSE INPUT VOLTAGE (mV)
14
12
10
8.0
6.0
4.0
2.0
0
100
Figure 10. Fault Output Voltage
versus Current Sense Input Voltage
VCC = 15 V
VPin 4 = 0 V
VPin 8 > 7.0 V
TA = 25°C
110 120 130 140 150
VPin 1, CURRENT SENSE INPUT VOLTAGE (mV)
160
Figure 11. Overcurrent Protection Threshold
Voltage versus Temperature
70
68 VCC = 15 V
66
64
62
60
–60 –40 –20 0 20 40 60 80 100 120 140
TA, AMBIENT TEMPERATURE (°C)
Figure 12. Overcurrent Protection Threshold
Voltage versus Supply Voltage
70
68 TA = 25°C
66
64
62
60
12 14 16 18 20
VCC, SUPPLY VOLTAGE (V)
Figure 13. Short Circuit Comparator Threshold
Voltage versus Temperature
135
VCC = 15 V
130
Figure 14. Short Circuit Comparator Threshold
Voltage versus Supply Voltage
135
TA = 25°C
130
125
–60
–40 –20 0 20 40 60 80 100 120 140
TA, AMBIENT TEMPERATURE (°C)
125
12
14 16 18
VCC, SUPPLY VOLTAGE (V)
20
MOTOROLA ANALOG IC DEVICE DATA
5

5 Page





MC33153 arduino
MC33153
APPLICATION INFORMATION
Figure 34 shows a basic IGBT driver application. When
driven from an optoisolator, an input pull up resistor is
required. This resistor value should be set to bias the output
transistor at the desired current. A decoupling capacitor
should be placed close to the IC to minimize switching noise.
A bootstrap diode may be used for a floating supply. If the
protection features are not required, then both the Fault
Blanking/Desaturation and Current Sense Inputs should both
be connected to the Kelvin Ground (Pin 2). When used with a
single supply, the Kelvin Ground and VEE pins should be
connected together. Separate gate resistors are
recommended to optimize the turn–on and turn–off drive.
If desaturation protection is desired, a high voltage diode
is connected to the Fault Blanking/Desaturation pin. The
blanking capacitor should be connected from the
Desaturation pin to the VEE pin. If a dual supply is used, the
blanking capacitor should be connected to the Kelvin
Ground. The Current Sense Input should be tied high
because the two comparator outputs are ANDed together.
Although the reverse voltage on collector of the IGBT is
clamped to the emitter by the free–wheeling diode, there is
normally considerable inductance within the package itself. A
small resistor in series with the diode can be used to protect
the IC from reverse voltage transients.
Figure 34. Basic Application
18 V
Bootstrap
7
Fault
6
VCC Desat/ 8
Blank
5
Output
MC33153
4
Input
1
Sense
VEE Gnd 2
3
B+
Figure 36. Desaturation Application
18 V
7
Fault
6
VCC Desat/ 8
Blank
MC33153
5
Output
4
Input
1
Sense
VEE Gnd 2
3
CBlank
Figure 35. Dual Supply Application
15 V
7
Fault
6
VCC Desat/ 8
Blank
5
Output
MC33153
4
Input
1
Sense
VEE Gnd 2
3
–5.0 V
When used in a dual supply application as in Figure 35, the
Kelvin Ground should be connected to the emitter of the
IGBT. If the protection features are not used, then both the
Fault Blanking/Desaturation and the Current Sense Inputs
should be connected to Ground. The input optoisolator
should always be referenced to VEE.
When using sense IGBTs or a sense resistor, the sense
voltage is applied to the Current Sense Input. The sense trip
voltages are referenced to the Kelvin Ground pin. The sense
voltage is very small, typically about 65 mV, and sensitive to
noise. Therefore, the sense and ground return conductors
should be routed as a differential pair. An RC filter is useful in
filtering any high frequency noise. A blanking capacitor is
connected from the blanking pin to VEE. The stray
capacitance on the blanking pin provides a very small level of
blanking if left open. The blanking pin should not be grounded
when using current sensing, that would disable the sense.
The blanking pin should never be tied high, that would short
out the clamp transistor.
Figure 37. Sense IGBT Application
18 V
7
Fault
6
VCC Desat/ 8
Blank 5
Output
MC33153
1
Sense
4
Input
VEE
3
Gnd 2
MOTOROLA ANALOG IC DEVICE DATA
11

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