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H649A PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H649A
部品説明 Low Frequancy Power Amplifier
メーカ Shantou Huashan
ロゴ Shantou Huashan ロゴ 



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H649A Datasheet, H649A PDF,ピン配置, 機能
Shantou Huashan Electronic Devices Co.,Ltd.
LOW FREQUANCY POWER AMPLIFIER
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation Tc=25
20W
PC Collector Dissipation TA=25
1W
VCBO Collector-Base Voltage
-180V
VCEO Collector-Emitter Voltage
-160V
VEBO Emitter-Base Voltage
-5V
IC Collector Current DC
-1.5A
PNP SILICON TRANSISTOR
H649A
TO-126ML
1 Emitter E
2 Collector C
3 Base B
Electrical Characteristics Ta=25
Symbol
Parameter
Min Typ Max Unit
Test Conditions
HFE 1
DC Current Gain
60 200 VCE= -5V, IC= -150mA
HFE 2
30
VCE(sat) Collector- Emitter Saturation Voltage
BVCBO
Collector-Base Breakdown Voltage
-180
BVCEO
Collector-Emitter Breakdown Voltage -160
VCE= -5V, IC= -500mA
-1 V IC= -500mA, IB= -50mA
V IC= -1mA, IE=0
V IC= -10mA, IB=0
BVEBO
Emitter- Base Breakdown Voltage
-5
V IE= -1mA, IC=0
ICBO
fT
Cob
Collector-Base Cutoff Current
Current Gain- Bandwidth Product
Output Capacitance
-10 A VCB= -160V, IE=0
140 MHz VCE=-5V, IC=-150mA
27 pF VCB=-10V,IE=0,f=1MHz
hFE Classification
B
C
60 120
100 200

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部品番号部品説明メーカ
H649A

Low Frequancy Power Amplifier

Shantou Huashan
Shantou Huashan

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