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STP120NF10のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET」です。 |
部品番号 | STP120NF10 |
| |
部品説明 | N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTP120NF10ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
STB120NF10
STP120NF10
N-CHANNEL 100V - 0.009 Ω - 120A D²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB120NF10
STP120NF10
100 V
100 V
< 0.0105 Ω 120 A
< 0.0105 Ω 120 A
s TYPICAL RDS(on) = 0.009 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize the on-resistance. It is therefore suitable as
primary switch in advanced high-efficiency, high-
frequency isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any
applications with low gate drive requirements.
APPLICATIONS
s AUDIO AMPLIFIERS
s POWER TOOLS
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB120NF10
STP120NF10
MARKING
B120NF10
P120NF10
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS(2)
Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
May 2003
Value
100
100
± 20
120
85
480
312
2.08
10
550
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤120A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60A, VDD = 50V
1/10
1 Page STB120NF10 STP120NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 60 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=80 V ID=120 A VGS=10 V
Min.
Typ.
25
90
172
32
64
Max.
233
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 50 V
ID = 60 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
132
68
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 120 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 120 A di/dt = 100A/µs
VDD = 40 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
152
760
10
Max.
120
480
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/10
3Pages STB120NF10 STP120NF10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ STP120NF10 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
STP120NF10 | N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET | ST Microelectronics |