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STP12PF06 の電気的特性と機能

STP12PF06のメーカーはST Microelectronicsです、この部品の機能は「P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP12PF06
部品説明 P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP12PF06 Datasheet, STP12PF06 PDF,ピン配置, 機能
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STP12PF06
STF12PF06
P-CHANNEL 60V - 0.18 - 12A TO-220/TO-220FP
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
STP12PF06
STF12PF06
60 V
60 V
< 0.20
< 0.20
TYPICAL RDS(on) = 0.18
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
ID
12 A
12 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
Figure 1:Package
3
2
1
TO-220
3
2
1
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS
MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
Table 2: Order Codes
PART NUMBER
STP12PF06
STF12PF06
MARKING
P12PF06
F12PF06
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
NOTE:For the P-CHANNEL MOSFET actual polarity of voltages
and current has to be reversed.
March 2005
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
STP20PF06
12
8.4
48
60
0.4
Value
60
60
± 20
6
200
STF20PF06
8
5.6
32
225
0.17
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 12A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 12A, VDD= 25V
Rev. 2.0
1/10

1 Page





STP12PF06 pdf, ピン配列
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STP12PF06 STF12PF06
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V
ID = 6 A
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 19)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD= 48 V ID= 12 A VGS= 10 V
Min.
Typ.
20
40
16
4
6
Max.
21
Unit
ns
ns
nC
nC
nC
Table 9: SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 30 V
ID = 6 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 19)
Min.
Typ.
40
10
Max.
Unit
ns
ns
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (1)
Source-drain Current
Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 12 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 21)
(1 )Pulse width limited by safe operating area.
(2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
100
260
5.2
Max.
10
40
2.5
Unit
A
A
V
ns
nC
A
Figure 3: Safe Operating Area for TO-220
Figure 4: Safe Operating Area for TO-220FP
3/10


3Pages


STP12PF06 電子部品, 半導体
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STP12PF06 STF12PF06
Figure 17: Unclamped Inductive Load Test Circuit
Figure 18: Unclamped Inductive Waveform
Figure 19: Switching Times Test Circuits For Re-
sistive Load
Figure 20: Gate Charge test Circuit
Figure 21: Test Circuit For Inductive Load
Switching And Diode Recovery Times
6/10

6 Page



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共有リンク

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部品番号部品説明メーカ
STP12PF06

P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET

ST Microelectronics
ST Microelectronics
STP12PF06

P-CHANNEL POWER MOSFET

STMicroelectronics
STMicroelectronics


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