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PDF STP5NB60 Data sheet ( Hoja de datos )
| Número de pieza | STP5NB60 | |
| Descripción | N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STP5NB60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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STP5NB60
® STP5NB60FP
N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST P5N B60
ST P5N B60 FP
600 V
600 V
< 2.0 Ω
< 2.0 Ω
5A
3A
s TYPICAL RDS(on) = 1.8 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
IDM(•)
Ptot
Drain- gat e Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (cont inuous) at Tc = 25 o C
Drain Current (cont inuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Ts tg Storage T emperature
Tj Max. Operating Junction T emperature
(•) Pulse width limited by safe operating area
September 1999
Value
STP5NB60 STP5NB60FP
600
600
± 30
53
3.1 1.9
20 20
100 35
0.8 0.28
4.5 4.5
2000
-65 to 150
150
( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W /o C
V/ns
V
oC
oC
1/9
1 page  
Gate Charge vs Gate-source Voltage
Capacitance Variations
STP5NB60/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STP5NB60.PDF ] | |
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