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H9012 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H9012
部品説明 PNP Silicon Transistor
メーカ Shantou Huashan
ロゴ Shantou Huashan ロゴ 



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H9012 Datasheet, H9012 PDF,ピン配置, 機能
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H9012
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
ABSOLUTE MAXIMUM RATINGSTa=25℃)
TO-92
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………-40V
VCEO——Collector-Emitter Voltage……………………………-20V
1EmitterE
2BaseB
3CollectorC
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-500mA
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
VBE(ON)
BVCBO
BVCEO
BVEBO
Characteristics
DataSheeMt4iUn .comTyp
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
78
40
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
-600
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
-40
-20
-5
Max Unit
-100 nA
-100 nA
246
-600
-1.2
-730
mV
V
mV
V
V
V
Test Conditions
DataShee
VCB=-25V, IE=0
VEB=-3V, IC=0
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μAIC=0
hFE Classification
E
78—112
F
96—135
G
112—166
H
144—202
I
176—246
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