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IRF3710xのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF3710x |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF3710xダウンロード(pdfファイル)リンクがあります。 Total 10 pages
PD - 94201B
IRF3710S
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
IRF3710L
HEXFET® Power MOSFET
D VDSS = 100V
RDS(on) = 23mΩ
G
ID = 57A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
D2Pak
IRF3710S
TO-262
IRF3710L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
57
40
180
200
1.3
± 20
28
20
5.8
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
www.irf.com
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
3/24/05
1 Page IRF3710S/IRF3710L
1000
100
VGS
TOP
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
1000
100
VGS
TOP
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
10
3.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
10
3.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.10
3.0
VDS = 15V
20µs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
ID = 57A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF3710S/IRF3710L
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
550
ID
TOP 11A
20A
440
BOTTOM
28A
330
220
110
0
25 50 75 100 125
Starting T , JJunction Temperature
150 175
( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
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