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IXSN35N120AU1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXSN35N120AU1
部品説明 High Voltage 1 GBT with Diode
メーカ IXYS
ロゴ IXYS ロゴ 



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IXSN35N120AU1 Datasheet, IXSN35N120AU1 PDF,ピン配置, 機能
High Voltage
IGBT with Diode
IXSN 35N120AU1
3
2
VCES
IC25
VCE(sat)
= 1200 V
= 70 A
= 4V
Symbol
Test Conditions
41
Maximum Ratings
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
P
C
PD
VISOL
TJ
TJM
Tstg
M
d
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C
RG = 22 W, non repetitive
T
C
= 25°C
IGBT
Diode
50/60 Hz
IISOL £ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
1200
1200
±20
±30
70
35
140
ICM = 70
@ 0.8 VCES
10
V
A
V
V
A
A
A
A
ms
300 W
175 W
2500
3000
V~
V~
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
V
GE(th)
ICESÿ
IGES
IC = 5 mA, VGE = 0 V
I = 4 mA, V = V
C CE GE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
TJ = 25°C
TJ = 125°C
1200
4
V
8V
750 mA
15 mA
±100 nA
V
CE(sat)
I = I , V = 15 V
C C90 GE
4V
‚ Device must be heat sunk during high temperature leackage test to avoid thermal runaway.
miniBLOC, SOT-227 B
1
2
4
3
1 = Emitter , 3 = Collector
2 = Gate,
4 = Emitter 
 Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
q International standard package
miniBLOC (ISOTOP) compatible
q Aluminium-nitride isolation
- high power dissipation
q Isolation voltage 3000 V~
q Low V
CE(sat)
- for minimum on-state conduction
losses
q Fast Recovery Epitaxial Diode
- short t and I
rr RM
q Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
q Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
q AC motor speed control
q DC servo and robot drives
q DC choppers
q Uninterruptible power supplies (UPS)
q Switch-mode and resonant-mode
power supplies
Advantages
q Space savings
q Easy to mount with 2 screws
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92519E (12/96)
1-4

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IXSN35N120AU1

High Voltage 1 GBT with Diode

IXYS
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