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PDF IRFP9140 Data sheet ( Hoja de datos )
| Número de pieza | IRFP9140 | |
| Descripción | P-Channel Power MOSFET | |
| Fabricantes | INTERSIL | |
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Data Sheet
IRFP9140
July 1999 File Number 2292.4
19A, 100V, 0.200 Ohm, P-Channel Power
MOSFET
This is an advanced power MOSFET designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon gate power field effect transistor
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17521.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP9140
TO-247
IRFP9140
NOTE: When ordering, use the entire part number.
Features
• 19A, 100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC STYLE T0-247
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
4-57
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRFP9140
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2500
2000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1500
1000
CISS
COSS
500
0
1
CRSS
10 102
NEGATIVE VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≤ -50V
12
9
6
TJ = 25oC
TJ = 150oC
3
0
0 8 16 24 32 40
NEGATIVE ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
TJ = 150oC
-10
-1.0
TJ = 25oC
-0.1
-0.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8
NEGATIVE VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = -19A
16
VDS = -80V
VDS = -50V
VDS = -20V
12
8
4
0
0 12 24 36 48 60
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-61
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFP9140.PDF ] | |
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