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SPD07N60C2 の電気的特性と機能

SPD07N60C2のメーカーはInfineon Technologiesです、この部品の機能は「Cool MOS Power Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SPD07N60C2
部品説明 Cool MOS Power Transistor
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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SPD07N60C2 Datasheet, SPD07N60C2 PDF,ピン配置, 機能
Final data
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best RDS(on) in TO-251 and TO-252
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved noise immunity
P-TO251
SPD07N60C2
SPU07N60C2
Product Summary
VDS 600 V
RDS(on) 0.6
ID 7.3 A
P-TO252
Type
SPD07N60C2
SPU07N60C2
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4312
Q67040-S4311
Marking
07N60C2
07N60C2
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C
ID
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=7.3A, VDD=50V
ID puls
EAS
EAR
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IAR
dv/dt
IS=7.3A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Power dissipation, TC = 25°C
Operating and storage temperature
VGS
Ptot
Tj , Tstg
Value
7.3
4.6
14.6
230
0.5
7.3
6
±20
83
-55... +150
Unit
A
mJ
A
V/ns
V
W
°C
Page 1
2002-10-07

1 Page





SPD07N60C2 pdf, ピン配列
Final data
SPD07N60C2
SPU07N60C2
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Characteristics
Transconductance
gfs
V DS2*ID*R DS(on)max,
-
4
-S
ID=4.6A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance, 1) Co(er)
energy related
Effective output capacitance, 2) Co(tr)
time related
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
- 970 - pF
- 370 -
- 10 -
- 30 - pF
- 55 -
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
tr
t d(off)
tf
VDD=380V, VGS=0/13V,
ID=7.3A, RG=12,
Tj=125°C
-
-
-
-
11 - ns
33 -
47 70
9 13.5
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=350V, ID=7.3A
VDD=350V, ID=7.3A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=7.3A
- 7.5 - nC
- 16.5 -
- 27 35
- 8 -V
1Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Page 3
2002-10-07


3Pages


SPD07N60C2 電子部品, 半導体
5 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
12
20V
A 12V
10V
8
Final data
SPD07N60C2
SPU07N60C2
6 Typ. drain-source on resistance
RDS(on) =f(ID )
parameter: Tj=150°C, VGS
3
9V
8.5V
8V
6
7.5V
4
7V
2 6.5V
6V
0
0 5 10 15 V 25
VDS
2
20V
12V
10V
9V
1.5 8.5V
8V
7.5V
7V
6.5V
1 6V
0 2 4 6 8 10 A 14
ID
7 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 4.6 A, VGS = 10 V
SPD07N60C2
3.4
8 Typ. transfer characteristics
ID= f ( VGS ); VDS2 x ID x RDS(on)max
parameter: tp = 10 µs
24
A
2.8
2.4
2
1.6
1.2
0.8 98%
typ
0.4
0
-60 -20 20 60 100 °C 180
Tj
Page 6
20
18
16
14
12
10
8
6
4
2
0
0
25 °C
150 °C
48
12 V
20
VGS
2002-10-07

6 Page



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共有リンク

Link :


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