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SPA07N60C2のメーカーはInfineon Technologiesです、この部品の機能は「Cool MOS Power Transistor」です。 |
部品番号 | SPA07N60C2 |
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部品説明 | Cool MOS Power Transistor | ||
メーカ | Infineon Technologies | ||
ロゴ | |||
このページの下部にプレビューとSPA07N60C2ダウンロード(pdfファイル)リンクがあります。 Total 14 pages
Final data
SPP07N60C2, SPB07N60C2
SPA07N60C2
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Product Summary
VDS @ Tjmax 650
RDS(on)
0.6
ID 7.3
V
Ω
A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Type
SPP07N60C2
SPB07N60C2
SPA07N60C2
P-TO220-3-31
3
12
Package
Ordering Code
P-TO220-3-1 Q67040-S4309
P-TO263-3-2 Q67040-S4310
P-TO220-3-31 Q67040-S4331
Marking
07N60C2
07N60C2
07N60C2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IS = 7.3 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Page 1
Symbol
Value
SPP_B SPA
ID
7.3 7.31)
4.6 4.61)
ID puls
EAS
14.6
230
14.6
230
Unit
A
A
mJ
EAR 0.5 0.5
IAR 7.3 7.3 A
dv/dt
6
6 V/ns
VGS
VGS
Ptot
Tj , Tstg
±20 ±20 V
±30 ±30
83 32 W
-55...+150
°C
2002-08-12
1 Page Final data
SPP07N60C2, SPB07N60C2
SPA07N60C2
Electrical Characteristics
Parameter
Symbol
Conditions
Characteristics
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
VDS ≥2*ID *RDS(on)max,
ID =4.6A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Gate Charge Characteristics
VDD=380V, VGS=0/13V,
ID =7.3A,
RG=12Ω, Tj=125°C
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=350V, ID=7.3A
VDD=350V, ID=7.3A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=7.3A
Values
Unit
min. typ. max.
- 4 -S
- 970 - pF
- 370 -
- 10 -
- 30 -
- 55 -
- 11 - ns
- 33 -
- 47 70
- 9 13.5
- 7.5 - nC
- 16.5 -
- 27 35
- 8 -V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated asPAV =EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Page 3
2002-08-12
3Pages 5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
Final data
SPP07N60C2, SPB07N60C2
SPA07N60C2
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
10 -1
10 -2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -1
10 -2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
25
20V
A
12V
15 10V
9V
10
8V
5
7V
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
12
20V
A 12V 9V
10V
8.5V
8
8V
6
7.5V
4
7V
2 6.5V
6V
0
0 5 10 15 V 25
VDS
0
0 5 10 15 V 25
VDS
Page 6
2002-08-12
6 Page | |||
ページ | 合計 : 14 ページ | ||
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部品番号 | 部品説明 | メーカ |
SPA07N60C2 | Cool MOS Power Transistor | Infineon Technologies |
SPA07N60C2 | Cool MOS Power Transistor | Infineon Technologies |
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