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PDF SP3232 Data sheet ( Hoja de datos )
| Número de pieza | SP3232 | |
| Descripción | 3.3V / 1000 Kbps RS-232 Transceivers | |
| Fabricantes | Sipex | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SP3232 (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
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® SP3222E/3232E
True +3.0V to +5.5V RS-232 Transceivers
■ Meets true EIA/TIA-232-F Standards
from a +3.0V to +5.5V power supply
■ Minimum 120Kbps Data Rate Under Full
Load
■ 1µA Low-Power Shutdown with Receivers
Active (SP3222E)
■ Interoperable with RS-232 down to +2.7V
power source
■ Enhanced ESD Specifications:
±15kV Human Body Model
±15kV IEC1000-4-2 Air Discharge
±8kV IEC1000-4-2 Contact Discharge
DESCRIPTION
The SP3222E/3232E series is an RS-232 transceiver solution intended for portable or hand-
held applications such as notebook or palmtop computers. The SP3222E/3232E series has
a high-efficiency, charge-pump power supply that requires only 0.1µF capacitors in 3.3V
operation. This charge pump allows the SP3222E/3232E series to deliver true RS-232
performance from a single power supply ranging from +3.3V to +5.0V. The SP3222E/3232E
are 2-driver/2-receiver devices. This series is ideal for portable or hand-held applications such
as notebook or palmtop computers. The ESD tolerance of the SP3222E/3232E devices are
over ±15kV for both Human Body Model and IEC1000-4-2 Air discharge test methods. The
SP3222E device has a low-power shutdown mode where the devices' driver outputs and
charge pumps are disabled. During shutdown, the supply current falls to less than 1µA.
SELECTION TABLE
MODEL Power Supplies
SP3222
SP3232
+3.0V to +5.5V
+3.0V to +5.5V
RS-232
Drivers
2
2
RS-232
External
Receivers Components
24
24
Shutdown
Yes
No
TTL No. of
3-State Pins
Yes 18, 20
No 16
Rev. 11/07/02
SP3222E/3232E True +3.0 to +5.0V RS-232 Transceivers
1
© Copyright 2001 Sipex Corporation
1 page  
NAME
FUNCTION
EN
Receiver Enable. Apply logic LOW for normal operation.
Apply logic HIGH to disable the receiver outputs (high-Z state).
C1+ Positive terminal of the voltage doubler charge-pump capacitor.
V+ +5.5V generated by the charge pump.
C1- Negative terminal of the voltage doubler charge-pump capacitor.
C2+ Positive terminal of the inverting charge-pump capacitor.
C2- Negative terminal of the inverting charge-pump capacitor.
V- -5.5V generated by the charge pump.
T1OUT RS-232 driver output.
T2OUT RS-232 driver output.
R1IN RS-232 receiver input.
R2IN RS-232 receiver input.
R1OUT TTL/CMOS reciever output.
R2OUT TTL/CMOS reciever output.
T1IN TTL/CMOS driver input.
T2IN TTL/CMOS driver input.
GND Ground.
VCC
SHDN
+3.0V to +5.5V supply voltage
Shutdown Control Input. Drive HIGH for normal device operation.
Drive LOW to shutdown the drivers (high-Z output) and the on-
board power supply.
N.C. No Connect.
Table 1. Device Pin Description
PIN NUMBER
SP3222E
DIP/SO
SSOP/-
TSSOP
SP3232E
11
-
22
33
44
55
66
77
15 17
88
14 16
99
13 15
10 10
12 13
11 12
16 18
17 19
1
2
3
4
5
6
14
7
13
8
12
9
11
10
15
16
18 20
-
- 11, 14
-
Rev. 11/07/02
SP3222E/3232E True +3.0 to +5.0V RS-232 Transceivers
5
© Copyright 2001 Sipex Corporation
5 Page 
Phase 4
— VDD transfer — The fourth phase of the clock
connects the negative terminal of C2 to GND,
and transfers this positive generated voltage
across C2 to C4, the VDD storage capacitor. This
voltage is regulated to +5.5V. At this voltage,
the internal oscillator is disabled. Simultaneous
with the transfer of the voltage to C4, the positive
side of capacitor C1 is switched to VCC and the
negative side is connected to GND, allowing the
charge pump cycle to begin again. The charge
pump cycle will continue as long as the opera-
tional conditions for the internal oscillator are
present.
Since both V+ and V– are separately generated
from VCC; in a no–load condition V+ and V– will
be symmetrical. Older charge pump approaches
that generate V– from V+ will show a decrease in
the magnitude of V– compared to V+ due to the
inherent inefficiencies in the design.
The clock rate for the charge pump typically
operates at 250kHz. The external capacitors can
be as low as 0.1µF with a 16V breakdown
voltage rating.
potential to store electro-static energy and
discharge it to an integrated circuit. The
simulation is performed by using a test model as
shown in Figure 17. This method will test the
IC’s capability to withstand an ESD transient
during normal handling such as in manufacturing
areas where the ICs tend to be handled
frequently.
The IEC-1000-4-2, formerly IEC801-2, is
generally used for testing ESD on equipment
and systems. For system manufacturers, they
must guarantee a certain amount of ESD
protection since the system itself is exposed to
the outside environment and human presence.
The premise with IEC1000-4-2 is that the
system is required to withstand an amount of
static electricity when ESD is applied to points
and surfaces of the equipment that are
accessible to personnel during normal usage.
The transceiver IC receives most of the ESD
current when the ESD source is applied to the
connector pins. The test circuit for IEC1000-4-2
is shown on Figure 18. There are two methods
within IEC1000-4-2, the Air Discharge method
and the Contact Discharge method.
ESD Tolerance
The SP3222E/3232E series incorporates
ruggedized ESD cells on all driver output and
receiver input pins. The ESD structure is
improved over our previous family for more
rugged applications and environments sensitive
to electro-static discharges and associated
transients. The improved ESD tolerance is at
least ±15kV without damage nor latch-up.
There are different methods of ESD testing
applied:
a) MIL-STD-883, Method 3015.7
b) IEC1000-4-2 Air-Discharge
c) IEC1000-4-2 Direct Contact
The Human Body Model has been the generally
accepted ESD testing method for semiconduc-
tors. This method is also specified in MIL-STD-
883, Method 3015.7 for ESD testing. The premise
of this ESD test is to simulate the human body’s
With the Air Discharge Method, an ESD
voltage is applied to the equipment under
test (EUT) through air. This simulates an
electrically charged person ready to connect a
cable onto the rear of the system only to find
an unpleasant zap just before the person
touches the back panel. The high energy
potential on the person discharges through
an arcing path to the rear panel of the system
before he or she even touches the system. This
energy, whether discharged directly or through
air, is predominantly a function of the discharge
current rather than the discharge voltage.
Variables with an air discharge such as
approach speed of the object carrying the ESD
potential to the system and humidity will tend to
change the discharge current. For example, the
rise time of the discharge current varies with
the approach speed.
Rev. 11/07/02
SP3222E/3232E True +3.0 to +5.0V RS-232 Transceivers
11
© Copyright 2001 Sipex Corporation
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet SP3232.PDF ] | |
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