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DK1308FWM の電気的特性と機能

DK1308FWMのメーカーはDynexです、この部品の機能は「Fast Switching Thyristor」です。


製品の詳細 ( Datasheet PDF )

部品番号 DK1308FWM
部品説明 Fast Switching Thyristor
メーカ Dynex
ロゴ Dynex ロゴ 




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DK1308FWM Datasheet, DK1308FWM PDF,ピン配置, 機能
DK13..FW
DK13..FW
Fast Switching Thyristor
Replaces January 2000 version, DS4267-3.0
FEATURES
s Low Switching Losses At High Frequency.
s Fully Characterised For Operation Up To 20kHz.
APPLICATIONS
s High Power Inverters And Choppers.
s UPS.
s AC Motor Drives.
s Induction Heating.
s Cycloconverters.
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dVdt
800V
110A
1200A
200V/µs
dI/dt 200A/µs
tq 10µs
DS4267-4.0 July 2001
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VV
DRM RRM
V
DK13 08FW K or M
DK13 06FW K or M
800
600
Conditions
V = V + 100V
RSM
RRM
I = I = 15mA
DRM RRM
at V or V & T
RRM
DRM
vj
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Add K to type number for 1/2" 20 UNF thread, e.g. DK13 06FWK
or
Add M to type number for M12 thread, e.g. DK13 06FM.
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: TO94
See Package Details for further information.
Fig. 1 Package outline
www.dynexsemi.com
1/13

1 Page





DK1308FWM pdf, ピン配列
DK13..FW
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
VTM Maximum on-state voltage
At 300A peak, Tcase = 25oC
-
I /I
Peak reverse and off-state current
RRM DRM
At V /V , T = 125oC
RRM DRM case
-
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% VDRM Tj = 125oC, Gate open circuit -
dI/dt Rate of rise of on-state current
Gate source 20V, 20
tr < 0.5µs, Tj = 125˚C
Repetitive 50Hz
Non-repetitive
-
-
V
T(TO)
Threshold voltage
At T = 125oC
vj
-
rT On-state slope resistance
At Tvj = 125oC
-
t
gd
t
(ON)TOT
Delay time
Total turn-on time
Tj = 25˚C, IT = 50A,
V = 300V, I = 1A,
DG
dI/dt
=50A/µs,
dI /dt
G
=
1A/µs
-
-
IH Holding current
Tj = 25oC, ITM = 1A, VD = 12V
60*
tq Turn-off time
*Typical value.
Tj = 125˚C, IT = 100A, VR =
dV/dt = 200V/µs (Linear to
50V,
60%
VDRM),
tq
code:
W
dI /dt
R
=
30A/µs,
Gate
open
circuit
-
Max. Units
2.35 V
15 mA
200 V/µs
500 A/µs
800 A/µs
1.65 V
3.5 m
3 µs
1.5 µs
- mA
10 µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
V
GD
VRGM
I
FGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
V
DRM
=
12V,
T
case
=
25oC,
R
L
=
6
V = 12V,
DRM
T
case
=
25oC,
R
L
=
6
At
V
DRM
T
case
=
125oC,
R
L
=
1k
Anode positive with respect to cathode
Typ. Max. Units
- 3.0 V
- 200 mA
- 0.2 V
- 5.0 V
- 4A
- 16 W
- 3.0 W
www.dynexsemi.com
3/13


3Pages


DK1308FWM 電子部品, 半導体
DK13..FW
NOTES:
1. VD 600V.
2. VR 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7
Fig.7 Energy per pulse for sinusoidal pulses
NOTES:
1. VD 600V.
2. VR 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7
Fig.8 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
6/13
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部品番号部品説明メーカ
DK1308FWK

Fast Switching Thyristor

Dynex
Dynex
DK1308FWM

Fast Switching Thyristor

Dynex
Dynex


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