Datasheet BB178 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BB178	VHF variable capacitance diode DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB178 VHF variable capacitance diode Product speciﬁcation 1997 Nov 13 Philips Semiconductors Product speciﬁcation VHF variable capacitance diode FEATURES • Excellent linearity • Excellent matching to 2% DMA • Ultra small plastic SMD package �	Philipss	diode
2	BB178	VHF variable capacitance diode	Leshan Radio Company	diode
3	BB178	VHF VARIABLE CAPACITANCE DIODE UNISONIC TECHNOLOGIES CO., LTD BB178 Preliminary DIODE VHF VARIABLE CAPACITANCE DIODE DESCRIPTION 2 1 SOD-523 The UTC BB178 is a planar technology variable capacitance diode providing the designers excellent matching performance, ultra-low series resistance and great linearity. The UTC BB178 is	Unisonic Technologies	diode
4	BB178LX	VHF variable capacitance diode BB178LX VHF variable capacitance diode Rev. 02 — 12 February 2009 Product data sheet 1. Product proﬁle 1.1 General description The BB178LX is a planar technology variable capacitance diode in a SOD882T ultra small leadless plastic SMD package. The excellent matching performance is achieved by	NXP Semiconductors	diode

BB1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BB101C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand	Hitachi	amplifier
2	BB101M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand	Hitachi	amplifier
3	BB102C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing	Hitachi	amplifier
4	BB102M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing	Hitachi	amplifier
5	BB105	Silicon Planar Signal Diodes	Iskra Semic	diode
6	BB105A	(BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/	Tele Fun Ken	diode
7	BB105B	(BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/	Tele Fun Ken	diode

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Número de pieza	Descripción	Fabricantes	PDF
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