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Datasheet BB156 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BB156 | Low-voltage variable capacitance diode DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D049
BB156 Low-voltage variable capacitance diode
Product specification 1998 Aug 17
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
FEATURES • Excellent linearity • Very small plastic SMD package • C7.5: 4 |  Philipss | diode |
| 2 | BB156 | Low-voltage variable capacitance diode DISCRETE SEMICONDUCTORS
DATA SHEET
BB156 Low-voltage variable capacitance diode
Product specification Supersedes data of 1998 Aug 17
2004 Mar 01
NXP Semiconductors
Low-voltage variable capacitance diode
Product specification
BB156
FEATURES Excellent linearity Very small plastic SMD pac |  NXP Semiconductors | diode |
BB1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BB101C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-505 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand  Hitachi amplifier | | |
| 2 | BB101M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-504 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand Hitachi amplifier | | |
| 3 | BB102C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-588 (Z) 1st. Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing Hitachi amplifier | | |
| 4 | BB102M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-587 (Z) 1st. Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing Hitachi amplifier | | |
| 5 | BB105 | Silicon Planar Signal Diodes Iskra Semic diode | | |
| 6 | BB105A | (BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
 Tele Fun Ken diode | | |
| 7 | BB105B | (BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Tele Fun Ken diode | |
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