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BB101CのメーカーはHitachiです、この部品の機能は「Build in Biasing Circuit MOS FET IC UHF RF Amplifier」です。 |
部品番号 | BB101C |
| |
部品説明 | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | ||
メーカ | Hitachi | ||
ロゴ | |||
このページの下部にプレビューとBB101Cダウンロード(pdfファイル)リンクがあります。 Total 11 pages
BB101C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-505
1st. Edition
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
1 Page BB101C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source break down
voltage
V(BR)DSS
6
Gate 1 to source breakdown
voltage
V(BR)G1SS +6
Gate 2 to source breakdown
voltage
V(BR)G2SS ±6
Gate 1 to source cutoff current IG1SS
—
Gate 2 to source cutoff current IG2SS
—
Gate 1 to source cutoff voltage VG1S(off) 0.2
Gate 2 to source cutoff voltage VG2S(off) 0.4
Drain current
I D(op)
10
Forward transfer admittance |yfs|
16
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Ciss
Coss
Crss
PG
Noise figure
Note: Marking is “AU–”.
NF
1.2
0.7
—
16
—
Typ Max Unit
— —V
— —V
— —V
— +100 nA
— ±100 nA
— 0.8 V
— 1.0 V
15 20 mA
22 — mS
1.7
1.1
0.012
20
2.2
1.5
0.03
—
pF
pF
pF
dB
2.0 3.0 dB
Test conditions
ID = 200 µA
VG1S = VG2S = 0
IG1 = +10 µA
VG2S = VDS = 0
IG2 = +10 µA
VG1S = VDS = 0
VG1S = +5 V
VG2S = VDS = 0
VG2S = ±5 V
VG1S = VDS = 0
VDS = 5 V, VG2S = 4 V
ID = 100 µA
VDS = 5 V, VG1S = 5 V
ID = 100 µA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 220 kΩ
VDS = 5 V, VG1 = 5 V
VG2S = 4 V
RG = 220 kΩ, f = 1 kHz
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 220 kΩ
f = 1 MHz
VDS = 5 V, VG1 = 5 V
VG2S = 4 V
RG = 220 kΩ, f = 900 MHz
3
3Pages BB101C
Drain Current vs.Gate1 Voltege
20
VDS = 5 V
16 RG = 220 kΩ
12 4 V
3V
8 2V
4
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 150 kΩ
20 f = 1 kHz
4V
3V
15 2 V
10
5
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
Drain Current vs.Gate1 Voltege
20
VDS = 5 V
RG = 390 kΩ
16
12
8 4V
3V
2V
4
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 220 kΩ
20 f = 1 kHz
4V
3V
15 2 V
10
5
VG2S = 1 V
0 1 23 45
Gate1 Voltage VG1 (V)
6
6 Page | |||
ページ | 合計 : 11 ページ | ||
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PDF ダウンロード | [ BB101C データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BB101C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | Hitachi |
BB101M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | Hitachi |