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BB101C の電気的特性と機能

BB101CのメーカーはHitachiです、この部品の機能は「Build in Biasing Circuit MOS FET IC UHF RF Amplifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 BB101C
部品説明 Build in Biasing Circuit MOS FET IC UHF RF Amplifier
メーカ Hitachi
ロゴ Hitachi ロゴ 




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BB101C Datasheet, BB101C PDF,ピン配置, 機能
BB101C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-505
1st. Edition
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain

1 Page





BB101C pdf, ピン配列
BB101C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source break down
voltage
V(BR)DSS
6
Gate 1 to source breakdown
voltage
V(BR)G1SS +6
Gate 2 to source breakdown
voltage
V(BR)G2SS ±6
Gate 1 to source cutoff current IG1SS
Gate 2 to source cutoff current IG2SS
Gate 1 to source cutoff voltage VG1S(off) 0.2
Gate 2 to source cutoff voltage VG2S(off) 0.4
Drain current
I D(op)
10
Forward transfer admittance |yfs|
16
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Ciss
Coss
Crss
PG
Noise figure
Note: Marking is “AU–”.
NF
1.2
0.7
16
Typ Max Unit
— —V
— —V
— —V
— +100 nA
±100 nA
— 0.8 V
— 1.0 V
15 20 mA
22 — mS
1.7
1.1
0.012
20
2.2
1.5
0.03
pF
pF
pF
dB
2.0 3.0 dB
Test conditions
ID = 200 µA
VG1S = VG2S = 0
IG1 = +10 µA
VG2S = VDS = 0
IG2 = +10 µA
VG1S = VDS = 0
VG1S = +5 V
VG2S = VDS = 0
VG2S = ±5 V
VG1S = VDS = 0
VDS = 5 V, VG2S = 4 V
ID = 100 µA
VDS = 5 V, VG1S = 5 V
ID = 100 µA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 220 k
VDS = 5 V, VG1 = 5 V
VG2S = 4 V
RG = 220 k, f = 1 kHz
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 220 k
f = 1 MHz
VDS = 5 V, VG1 = 5 V
VG2S = 4 V
RG = 220 k, f = 900 MHz
3


3Pages


BB101C 電子部品, 半導体
BB101C
Drain Current vs.Gate1 Voltege
20
VDS = 5 V
16 RG = 220 k
12 4 V
3V
8 2V
4
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 150 k
20 f = 1 kHz
4V
3V
15 2 V
10
5
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
Drain Current vs.Gate1 Voltege
20
VDS = 5 V
RG = 390 k
16
12
8 4V
3V
2V
4
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 220 k
20 f = 1 kHz
4V
3V
15 2 V
10
5
VG2S = 1 V
0 1 23 45
Gate1 Voltage VG1 (V)
6

6 Page



ページ 合計 : 11 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
BB101C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi
Hitachi
BB101M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

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Hitachi


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