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2MBI150N-120 の電気的特性と機能

2MBI150N-120のメーカーはFujiです、この部品の機能は「IGBT MODULE ( N series )」です。


製品の詳細 ( Datasheet PDF )

部品番号 2MBI150N-120
部品説明 IGBT MODULE ( N series )
メーカ Fuji
ロゴ Fuji ロゴ 




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2MBI150N-120 Datasheet, 2MBI150N-120 PDF,ピン配置, 機能
IGBT MODULE ( N series )
n Outline Drawing
n Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
1200
± 20
V
V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
150
300
150
300
1100
+150
-40 +125
A
W
°C
°C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *2
2500
3.5
4.5
V
Nm
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 4.5 Nm (M6)
Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
ICES
Gate-Emitter Leackage Current
IGES
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse Transfer capacitance
Cres
Turn-on Time
tON
tr
Turn-off Time
tOFF
tf
Diode Forward On-Voltage
VF
Reverse Recovery Time
trr
Test Conditions
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=150mA
VGE=15V IC=150A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=150A
VGE=± 15V
RG=5.6
IF=150A VGE=0V
IF=150A
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
24000
8700
7740
0.65
0.25
0.85
0.35
Max.
2.0
30
7.5
3.3
1.2
0.6
1.5
0.5
3.0
350
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.025
Max.
0.11
0.33
Units
°C/W

1 Page





2MBI150N-120 pdf, ピン配列
Switching time vs. RG
Vcc=600V, Ic=150A, VGE=±15V, Tj=25°C
1000
toff
ton
tr
tf
100
10
Gate resistance : RG []
Forward current vs. Forward voltage
VGE=OV
Tj=125°C 25°C
300
200
100
0
012345
Forward voltage : VF [V]
Transient thermal resistance
Diode
0,1
IGBT
0,01
0,001
0,001
0,01
0,1
Pulse width : PW [sec]
1
1000
800
600
400
200
0
0
100
Dynamic input characteristics
Tj=25°C
25
Vcc=400V
600V
20
800V
15
10
5
500
1000
1500
Gate charge : Qg [nC]
0
2000
Reverse recovery characteristics
trr, Irr vs. IF
trr
125°C
trr
25°C
Irr
125°C
Irr
25°C
10
0 100 200 300
Forward current : IF [A]
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>5.6
1400
1200
1000
800
SCSOA
(non-repetitive pulse)
600
400
200
0
0
RBSOA (Repetitive pulse)
200 400 600 800 1000 1200
Collector-Emitter voltage : VCE [V]


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[ 2MBI150N-120 データシート.PDF ]


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共有リンク

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部品番号部品説明メーカ
2MBI150N-120

IGBT MODULE ( N series )

Fuji
Fuji


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