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2MBI150N-060 の電気的特性と機能

2MBI150N-060のメーカーはFujiです、この部品の機能は「IGBT MODULE ( N series )」です。


製品の詳細 ( Datasheet PDF )

部品番号 2MBI150N-060
部品説明 IGBT MODULE ( N series )
メーカ Fuji
ロゴ Fuji ロゴ 




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2MBI150N-060 Datasheet, 2MBI150N-060 PDF,ピン配置, 機能
IGBT MODULE ( N series )
n Outline Drawing
n Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (~3 Times Rated Current)
n Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
600 V
± 20 V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
150
300
150
300
600
+150
-40 +125
A
W
°C
°C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *1
2500
3.5
3.5
V
Nm
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
ICES
Gate-Emitter Leackage Current
IGES
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse Transfer capacitance
Cres
Turn-on Time
tON
tr
Turn-off Time
tOFF
tf
Diode Forward On-Voltage
VF
Reverse Recovery Time
trr
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=150mA
VGE=15V IC=150A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=150A
VGE=± 15V
RG=16
IF=150A VGE=0V
IF=150A
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
9900
2200
1000
0.6
0.2
0.6
0.2
Max.
1.0
15
7.5
2.8
1.2
0.6
1.0
0.35
3.0
300
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.05
Max.
0.21
0.47
Units
°C/W

1 Page





2MBI150N-060 pdf, ピン配列
1000
100
Switching time vs. RG
VCC=300V, IC=150A, VGE=±15V, Tj=25°C
ton
toff
tr
tf
10
10
50
Gate resistance : RG []
350
300
250
200
150
100
50
0
0
Forward current vs. Forward voltage
VGE=OV
Tj=125°C 25°C
123
Forward voltage : VF [V]
4
Transient thermal resistance
1
Diode
IGBT
0,1
0,01
0,001
0,01
0,1
Pulse width : PW [sec]
1
Dynamic input characteristics
Tj=25°C
500 25
VCC=200V
400 300V 20
400V
300 15
200 10
100 5
00
0 100 200 300 400 500 600 700 800 900
Gate charge : QG [nC]
Reverse recovery characteristics
trr , Irr vs. IF
trr 125°C
100 Irr 125°C
trr 25°C
Irr 25°C
10
0
50 100 150 200
Forward current : IF [A]
250
1400
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>16
1200
1000
800
SCSOA
(non-repetitive pulse)
600
400
200
0
0
RBSOA (Repetitive pulse)
100 200 300 400 500
Collector-Emitter voltage : VCE [V]
600


3Pages





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共有リンク

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部品番号部品説明メーカ
2MBI150N-060

IGBT MODULE ( N series )

Fuji
Fuji


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