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2MBI150N-060のメーカーはFujiです、この部品の機能は「IGBT MODULE ( N series )」です。 |
部品番号 | 2MBI150N-060 |
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部品説明 | IGBT MODULE ( N series ) | ||
メーカ | Fuji | ||
ロゴ | |||
このページの下部にプレビューと2MBI150N-060ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
IGBT MODULE ( N series )
n Outline Drawing
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (~3 Times Rated Current)
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
600 V
± 20 V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
150
300
150
300
600
+150
-40 ∼ +125
A
W
°C
°C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *1
2500
3.5
3.5
V
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
ICES
Gate-Emitter Leackage Current
IGES
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse Transfer capacitance
Cres
Turn-on Time
tON
tr
Turn-off Time
tOFF
tf
Diode Forward On-Voltage
VF
Reverse Recovery Time
trr
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=150mA
VGE=15V IC=150A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=150A
VGE=± 15V
RG=16Ω
IF=150A VGE=0V
IF=150A
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
9900
2200
1000
0.6
0.2
0.6
0.2
Max.
1.0
15
7.5
2.8
1.2
0.6
1.0
0.35
3.0
300
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.05
Max.
0.21
0.47
Units
°C/W
1 Page 1000
100
Switching time vs. RG
VCC=300V, IC=150A, VGE=±15V, Tj=25°C
ton
toff
tr
tf
10
10
50
Gate resistance : RG [Ω ]
350
300
250
200
150
100
50
0
0
Forward current vs. Forward voltage
VGE=OV
Tj=125°C 25°C
123
Forward voltage : VF [V]
4
Transient thermal resistance
1
Diode
IGBT
0,1
0,01
0,001
0,01
0,1
Pulse width : PW [sec]
1
Dynamic input characteristics
Tj=25°C
500 25
VCC=200V
400 300V 20
400V
300 15
200 10
100 5
00
0 100 200 300 400 500 600 700 800 900
Gate charge : QG [nC]
Reverse recovery characteristics
trr , Irr vs. IF
trr 125°C
100 Irr 125°C
trr 25°C
Irr 25°C
10
0
50 100 150 200
Forward current : IF [A]
250
1400
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>16Ω
1200
1000
800
SCSOA
(non-repetitive pulse)
600
400
200
0
0
RBSOA (Repetitive pulse)
100 200 300 400 500
Collector-Emitter voltage : VCE [V]
600
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ 2MBI150N-060 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2MBI150N-060 | IGBT MODULE ( N series ) | Fuji |