DataSheet.jp

2MBI100N-060 の電気的特性と機能

2MBI100N-060のメーカーはFujiです、この部品の機能は「IGBT MODULE」です。


製品の詳細 ( Datasheet PDF )

部品番号 2MBI100N-060
部品説明 IGBT MODULE
メーカ Fuji
ロゴ Fuji ロゴ 




このページの下部にプレビューと2MBI100N-060ダウンロード(pdfファイル)リンクがあります。

Total 4 pages

No Preview Available !

2MBI100N-060 Datasheet, 2MBI100N-060 PDF,ピン配置, 機能
2MBI100N-060
600V / 100A 2 in one-package
IGBT Module
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Collector-Emitter voltage
VCES
Gate-Emitter voltaga
VGES
Collector Continuous
IC
current 1ms
IC pulse
Continuous
-IC
1ms -IC pulse
Max. power dissipation
PC
Operating temperature
Tj
Storage temperature
Tstg
Isolation voltage
Vis
Screw torque
Mounting *1
Terminals *1
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)
Rating
600
±20
100
200
100
200
400
+150
-40 to +125
AC 2500 (1min.)
3.5
3.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
Equivalent Circuit Schematic
C2E1
C1 E2
¤¤
G1 E1
G2
¤ Current control circuit
E2
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
Characteristics
Min.
Typ.
––
––
4.5 –
––
– 6600
– 1470
– 670
– 0.6
– 0.2
– 0.6
– 0.2
––
––
Max.
1.0
15
7.5
2.8
1.2
0.6
1.0
0.35
3.0
0.3
Conditions
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
VGE=15V, IC=100A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=100A
VGE=±15V
RG=24 ohm
IF=100A, VGE=0V
IF=100A
Unit
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
Min.
Typ.
0.05
Max.
0.31
0.7
IGBT
Diode
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W

1 Page





2MBI100N-060 pdf, ピン配列
2MBI100N-060
IGBT Module
1000
100
10
Switching time vs. RG
Vcc=300V, Ic=100A, VGE=±15V, Tj=25°C
10 30
Gate resistance : RG [ohm]
50
Dynamic input characteristics
Tj=25°C
500 25
400 20
300 15
200 10
100 5
00 0
100
0
100 200 300 400
500 600
Gate charge : Qg [nC]
Forward current vs. Forward voltage
VGE=0V
250
200
150
100
50
0
0
10
123
Emitter-Collector voltage VECD [V]
(Forward voltage : VF [V])
Switching loss vs. Collector current
Vcc=300V, RG=24 ohm, VGE=±15V
4
8
6
4
2
0
0 25 50 75 100 125 150
Collector current : Ic [A]
Reverse recovery characteristics
trr, Irr, vs. IF
100
50
10
0
25 50 75 100 125 150
Forward current : IF [A]
1000
Reversed biased safe operating area
+VGE=15V, -VGE =< 15V, Tj <= 125°C, RG >= 24 ohm
800
600
400
200
0
0
100 200 300 400
500 600
Collector-Emitter voltage : VCE [V]


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ 2MBI100N-060 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
2MBI100N-060

IGBT MODULE

Fuji
Fuji


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap