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PDF 27C1024 Data sheet ( Hoja de datos )
| Número de pieza | 27C1024 | |
| Descripción | 1M-BIT [128K x 8/64K x 16] CMOS EPROM | |
| Fabricantes | Macronix International | |
| Logotipo |  |
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MX27C1100/27C1024
1M-BIT [128K x 8/64K x 16] CMOS EPROM
FEATURES
• 64K x 16 organization(MX27C1024, JEDEC pin
out)
• 128K x 8 or 64K x 16 organization(MX27C1100,
ROM pin out compatible)
• +12.5V programming voltage
• Fast access time: 55/70/85/100/120/150 ns
• Totally static operation
• Completely TTL compatible
• Operating current: 40mA
• Standby current: 100uA
• Package type:
- 40 pin plastic DIP
- 40 pin plastic SOP
- 44 pin PLCC
- 40pin 10 x 14mm TSOP(I)
GENERAL DESCRIPTION
The MX27C1024 is a 5V only, 1M-bit, One Time
Programmable Read Only Memory. It is organized as
64K words by 16 bits per word(MX27C1024), 128K x 8
or 64K x 16(MX27C1100), operates from a single + 5
volt supply, has a static standby mode, and features
fast single address location programming. All program-
ming signals are TTL levels, requiring a single pulse. For
programming outside from the system, existing
EPROM programmers may be used. The MX27C1100/
1024 supports a intelligent fast programming algorithm
which can result in programming time of less than thirty
seconds.
This EPROM is packaged in industry standard 40 pin
dual-in-line packages, 40 lead SOP, 44 lead PLCC, and
40 lead TSOP(I) packages.
PIN CONFIGURATIONS
PDIP/SOP(MX27C1100)
NC
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40 A8
39 A9
38 A10
37 A11
36 A12
35 A13
34 A14
33 A15
32 NC
31 BYTE/VPP
30 GND
29 Q15/A-1
28 Q7
27 Q14
26 Q6
25 Q13
24 Q5
23 Q12
22 Q4
21 VCC
BLOCK DIAGRAM (MX27C1100)
CE
OE
BYTE/VPP
CONTROL
LOGIC
OUTPUT
BUFFERS
A0~A15
ADDRESS
INPUTS
.
.
.
.
.
.
.
.
VCC
GND
Y-DECODER
X-DECODER
.
.
.
.
.
.
.
.
Y-SELECT
1M BIT
CELL
MAXTRIX
Q0~Q14
Q15/A-1
P/N: PM0156
REV. 4.4 , AUG. 20, 2001
1
1 page  
MX27C1100/27C1024
BYTE-WIDE MODE
With BYTE/VPP at GND ± 0.2V, outputs Q8-15 are tri-
stated. If Q15/A-1 = VIH, outputs Q0-7 present data bits
Q8-15. If Q15/A-1 = VIL, outputs Q0-7 present data bits
Q0-7.
arrays, a 4.7 uF bulk electrolytic capacitor should be
used between VCC and GND for each eight devices.
The location of the capacitor should be close to where
the power supply is connected to the array.
STANDBY MODE
The MX27C1100/1024 has a CMOS standby mode
which reduces the maximum VCC current to 100 uA. It
is placed in CMOS standby when CE is at VCC ± 0.3 V.
The MX27C1100/1024 also has a TTL-standby mode
which reduces the maximum VCC current to 1.5 mA. It
is placed in TTL-standby when CE is at VIH. When in
standby mode, the outputs are in a high-impedance
state, independent of the OE input.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two-
line control function is provided to allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not
occur.
It is recommended that CE be decoded and used as the
primary device-selecting function, while OE be made a
common connection to all devices in the array and
connected to the READ line from the system control bus.
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
SYSTEM CONSIDERATIONS
During the switch between active and standby
conditions, transient current peaks are produced on the
rising and falling edges of Chip Enable. The magnitude
of these transient current peaks is dependent on the
output capacitance loading of the device. At a minimum,
a 0.1 uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
Vcc and GND to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM
P/N: PM0156
5 REV. 4.4 , AUG. 20, 2001
5 Page 
MX27C1100/27C1024
DC PROGRAMMING CHARACTERISTICS TA = 25oC ± 5oC
SYMBOL
PARAMETER
MIN.
VOH
Output High Voltage
2.4
VOL
Output Low Voltage
VIH Input High Voltage
2.0
VIL Input Low Voltage
-0.3
ILI Input Leakage Current
-10
VH A9 Auto Select Voltage
11.5
ICC3
VCC Supply Current (Program & Verify)
IPP2
VPP Supply Current(Program)
VCC1
Fast Programming Supply Voltage
6.00
VPP1
Fast Programming Voltage
12.5
MAX.
0.4
VCC + 0.5
0.8
10
12.5
50
30
6.50
13.0
UNIT
V
V
V
V
uA
V
mA
mA
V
V
CONDITIONS
IOH = -0.40mA
IOL = 2.1mA
VIN = 0 to 5.5V
CE = VIL, OE = VIH
AC PROGRAMMING CHARACTERISTICS TA = 25oC ± 5°C
SYMBOL
PARAMETER
MIN.
tAS Address Setup Time
2.0
tOES
OE Setup Time
2.0
tDS Data Setup Time
2.0
tAH Address Hold Time
0
tDH Data Hold Time
2.0
tDFP
Output Enable to Output Float Delay
0
tVPS
VPP Setup Time
2.0
tPW PGM Program Pulse Width
95
tVCS
VCC Setup Time
2.0
tCES
CE Setup Time
2.0
tOE Data valid from OE
MAX.
130
105
150
UNIT
us
us
us
us
us
ns
us
us
us
us
ns
CONDITIONS
P/N: PM0156
11 REV. 4.4 , AUG. 20, 2001
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet 27C1024.PDF ] | |
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