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2764A の電気的特性と機能

2764AのメーカーはSTMicroelectronicsです、この部品の機能は「64K (8K x 8) UV EPROM and OTP ROM」です。


製品の詳細 ( Datasheet PDF )

部品番号 2764A
部品説明 64K (8K x 8) UV EPROM and OTP ROM
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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2764A Datasheet, 2764A PDF,ピン配置, 機能
M27C64A
64K (8K x 8) UV EPROM and OTP ROM
VERY FAST ACCESS TIME: 150ns
COMPATIBLE with HIGH SPEED
MICROPROCESSORS, ZERO WAIT STATE
LOW POWER “CMOS” CONSUMPTION:
– Active Current 30mA
– Standby Current 100µA
PROGRAMMING VOLTAGE: 12.5V
ELECTRONIC SIGNATURE for AUTOMATED
PROGRAMMING
HIGH SPEED PROGRAMMING
(less than 1 minute)
28
1
FDIP28W (F)
PLCC32 (C)
DESCRIPTION
The M27C64A is a high speed 65,536 bit UV eras-
able and electrically programmable memory
EPROM ideally suited for microprocessor systems
requiring large programs. It is organized as 8,192
by 8 bits.
The 28 pin Window Ceramic Frit-Seal Dual-in-Line
package has transparent lid which allows the user
to expose the chip to ultraviolet light to erase the
bit pattern. Anew pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only on time and erasure is not required, the
M27C64A is offered in Plastic Leaded Chip Carrier
package.
Figure 1. Logic Diagram
VCC VPP
13
A0-A12
8
Q0-Q7
Table 1. Signal Names
A0 - A12
Q0 - Q7
E
G
P
VPP
VCC
VSS
Address Inputs
Data Outputs
Chip Enable
Output Enable
Program
Program Supply
Supply Voltage
Ground
P M27C64A
E
G
VSS
AI00834B
March 1995
1/11

1 Page





2764A pdf, ピン配列
M27C64A
be used to gate data to the output pins, inde-
pendent of device selection. Assuming that the
addresses are stable, the address access time
(tAVQV) is equal to the delay from E to output (tELQV).
Data is available at the output after a delay of tGLQV
from the falling edge of G, assuming that E has
been low and the addresses have been stable for
at least tAVQV-tGLQV.
Standby Mode
The M27C64A has a standby mode which reduces
the active current from 30mA to 100µA. The
M27C64A is placed in the standby mode by apply-
ing a CMOS high signal to the E input. When in the
standby mode, the outputs are in a high impedance
state, independent of the G input.
Two Line Output Control
Because EPROMs are usually used in larger mem-
ory arrays, this product features a 2 line control
function which accommodates the use of multiple
memory connection. The two line control function
allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control lines,
E should be decoded and used as the primary
device selecting function, while G should be made
a common connection to all devices in the array
and connected to the READ line from the system
control bus. This ensures that all deselected mem-
ory devices are in their low power standby mode
and that the output pins are only active when data
is required from a particular memory device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loadingof the device at the
output.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommended that a 0.1µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7µF bulk electrolytic capacitor should be used
between VCC and VSS for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
Table 3. Operating Modes
Mode
Read
Output Disable
Program
Verify
Program Inhibit
Standby
Electronic Signature
Note: X = VIH or VIL, VID = 12V ± 0.5V
E
VIL
VIL
VIL
VIL
VIH
VIH
VIL
G P A9
VIL VIH
X
VIH VIH
X
VIH VIL Pulse
X
VIL VIH
X
XXX
XXX
VIL VIH VID
VPP Q0 - Q7
VCC Data Out
VCC Hi-Z
VPP Data In
VPP Data Out
VPP Hi-Z
VCC Hi-Z
VCC Codes
Table 4. Electronic Signature
Identifier
A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code
VIL
1
0
0
1
1
0
1
1
9Bh
Device Code
VIH 0 0 0 0 1 0 0 0
08h
3/11


3Pages


2764A 電子部品, 半導体
M27C64A
Table 8. Programming Mode DC Characteristics (1)
(TA = 25 °C; VCC = 6V ± 0.25V; VPP = 12.5V ± 0.3V)
Symbol
Parameter
Test Condition
Min
Max
ILI Input Leakage Current
VIL VIN VIH
±10
ICC Supply Current
30
IPP Program Current
E = VIL
30
VIL Input Low Voltage
–0.3 0.8
VIH Input High Voltage
2 VCC + 0.5
VOL Output Low Voltage
IOL = 2.1mA
0.4
VOH Output High Voltage TTL
IOH = –400µA
2.4
VID A9 Voltage
11.5 12.5
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Unit
µA
mA
mA
V
V
V
V
V
Table 9. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 6V ± 0.25V; VPP = 12.5V ± 0.3V)
Symbol Alt
Parameter
Test Condition
Min
tAVPL
tQVPL
tAS Address Valid to Program Low
tDS Input Valid to Program Low
2
2
tVPHPL
tVCHPL
tVPS VPP High to Program Low
tVCS VCC High to Program Low
2
2
tELPL
tCES
Chip Enable Low to
Program Low
2
tPLPH
Program Pulse Width (Initial)
tPW Program Pulse Width (Over
Program)
0.95
2.85
tPHQX
tDH
Program High to Input
Transition
2
tQXGL
tOES
Input Transition to Output
Enable Low
2
tGLQV
tOE
Output Enable Low to
Output Valid
tGHQZ (2)
tDFP
Output Enable High to
Output Hi-Z
0
tGHAX
tAH
Output Enable High to
Address Transition
0
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
Max
1.05
78.75
100
130
Unit
µs
µs
µs
µs
µs
ms
ms
µs
µs
ns
ns
ns
6/11

6 Page



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共有リンク

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部品番号部品説明メーカ
2764A

64K (8K x 8) UV EPROM and OTP ROM

STMicroelectronics
STMicroelectronics
2764A

64K(8K x 8) UV ERASABLE PROMs

Intel Corporation
Intel Corporation


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