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PDF HM621100A Data sheet ( Hoja de datos )
| Número de pieza | HM621100A | |
| Descripción | 1048576 word / 1 Bit High Speed CMOS Static RAM | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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HM621100A Series
1048576-word × 1-bit High Speed CMOS Static RAM
Rev. 0.0
Dec. 1, 1995
Description
The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word × 1-
bit. It realizes high speed access time (20/25/35 ns) and low power consumption, employing
CMOS process technology and high speed circuit designing technology. It is most
advantageous for the field where high speed and high density memory is required, such as
the cache memory for main frame or 32-bit MPU. The HM621100A, packaged in a 400-mil
plastic SOJ is available for high density mounting.
Features
• Single 5 V supply and high density 28-pin package (DIP and SOJ)
• High speed
Access time: 20/25/35 ns (max)
• Low power dissipation
Active mode: 350 mW (typ)
Standby mode: 100 µW (typ)
• Completely static memory required
No clock or timing strobe required
• Equal access and cycle time
• DirectlyTTLcompatible
All inputs and outputs
Ordering Information
Type No.
Access Time Package
HM621100AP-20
HM621100AP-25
HM621100AP-35
20 ns
25 ns
35 ns
400-mil 28-pin plastic DIP (DP-28C)
HM621100ALP-20
HM621100ALP-25
HM621100ALP-35
20 ns
25 ns
35 ns
HM621100AJP-20
HM621100AJP-25
HM621100AJP-35
20 ns
25 ns
35 ns
400-mil 28-pin plastic SOJ (CP-28D)
HM621100ALJP-20 20 ns
HM621100ALJP-25 25 ns
HM621100ALJP-35 35 ns
1 page  
HM621100A Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)
HM621100A-20 HM621100A-
25/35
Parameter
Symbol Min Typ*1 Max Min Typ*1 Max Unit Test
Conditions
Input leakage current
Output leakage current
Operating power supply
current
|ILI|
— — 2.0 — —
2.0 µA VCC = max
Vin = VSS to VCC
|ILO|
— — 2.0 — —
2.0 µA CS = VIH
VI/O = VSS to VCC
ICC
— — 150 — —
120 mA CS = VIL, II/O = 0 mA,
min cycle
Standby power supply current
Standby power supply current
(1)
ISB
I *2
SB1
— — 60 — — 40
— 0.02 2.0 — 0.02 2.0
I *3
SB1
— — 100 — — 100
Output low voltage
VOL — — 0.4 — — 0.4
Output high voltage
VOH 2.4 — — 2.4 — —
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
2. P and JP version
3. LP and LJP version
mA CS = VIH, min cycle
mA CS ≥ VCC –0.2 V
0 V ≤ Vin ≤ 0.2 V or
Vin ≥ VCC –0.2 V
µA
V IOL = 8 mA
V IOH = –4 mA
Capacitance (Ta = 25°C, f = 1 MHz)
Parameter
Symbol
Min
Input capacitance
Cin —
Max
5*2
Unit
pF
Test
Conditions
Vin = 0 V
6*3
Output capacitance
Cout
—
8
Notes: 1. This parameter is sampled and not 100% tested.
2. SOJ package
3. DIP package
pF Vout = 0 V
AC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, unless otherwise noted.)
Test Conditions
_ Input pulse levels: 0 V to 3.0 V
_ Input rise and fall time: 4 ns
_ Input timing reference levels: 1.5 V
_ Output timing reference levels: 1.5 V
_ Output load: See figures
5
5 Page 
HM621100A Series
1.6 Ta=25°C
Vcc=5V
1.4
1.2
1.0
0.8
0.6
0.4
123 45
High Level Output Voltage VOH (V)
High Level Output Current vs. High Level Output Voltage
1.6
Ta=25°C
1.4 Vcc=5V
1.2
1.0
0.8
0.6
0.4
0
0.2 0.4 0.6 0.8
Low Level Output Voltage VOL (V)
Low Level Output Current vs. Low Level Output Voltage
10 -4
Vcc=3V
CS=2.8V
10 -5
10 -6
10 -7
0
20 40 60 80
Ambient Temperature Ta (°C)
Standby Current vs. Ambient Temperature
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet HM621100A.PDF ] | |
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