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SFU9224 の電気的特性と機能

SFU9224のメーカーはFairchild Semiconductorです、この部品の機能は「Advanced Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SFU9224
部品説明 Advanced Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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SFU9224 Datasheet, SFU9224 PDF,ピン配置, 機能
Advanced Power MOSFET
SFR/U9224
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = -250V
Lower RDS(ON) : 1.65 (Typ.)
BVDSS = -250 V
RDS(on) = 2.4
ID = -2.5 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
-250
-2.5
-1.5
-10
+_ 30
156
-2.5
3.0
-4.8
2.5
30
0.24
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
4.17
50
110
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation

1 Page





SFU9224 pdf, ピン配列
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
101
V
GS
Top : -15V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
100 - 5.0 V
Bottom : - 4.5 V
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. T = 25 oC
C
100
-V , Drain-Source Voltage [V]
DS
101
Fig 3. On-Resistance vs. Drain Current
6
5
4
V = -10 V
GS
3
2
1 V = -20 V
GS @ Note : T = 25 oC
J
0
0 2 4 6 8 10
-I , Drain Current [A]
D
Fig 5. Capacitance vs. Drain-Source Voltage
800
600 C iss
C = C + C ( C = shorted )
iss gs gd ds
Coss= Cds+ Cgd
Crss= Cgd
400 C oss
C rss
200
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
-VDS , Drain-Source Voltage [V]
SFR/U9224
Fig 2. Transfer Characteristics
101
100 150 oC
25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = -40 V
3. 250 µs Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1
0.5
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
1.0 1.5 2.0 2.5 3.0 3.5
-VSD , Source-Drain Voltage [V]
4.0
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = -50 V
10
V = -125 V
DS
VDS = -200 V
5
@ Notes : ID =-2.7 A
0
0 3 6 9 12 15 18
QG , Total Gate Charge [nC]


3Pages


SFU9224 電子部品, 半導体
SFR/U9224
P-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Compliment of DUT
(N-Channel)
•dv/dt controlled by “RG
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s-e---W--i-d--t-h----
Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
Vf
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
VDD

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
SFU9220

Advanced Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
SFU9224

Advanced Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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