DataSheet.es    


PDF PSMN015-100B Data sheet ( Hoja de datos )

Número de pieza PSMN015-100B
Descripción N-channel TrenchMOS transistor
Fabricantes Philips 
Logotipo Philips Logotipo



Hay una vista previa y un enlace de descarga de PSMN015-100B (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! PSMN015-100B Hoja de datos, Descripción, Manual

Philips Semiconductors
Product specification
N-channel TrenchMOStransistor
PSMN015-100B, PSMN015-100P
FEATURES
’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 100 V
ID = 75 A
RDS(ON) 15 m
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN015-100P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN015-100B is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
tab
tab
2 drain1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
752
53
240
230
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT404 package
2 Maximum continuous current limited by package
August 1999
1
Rev 1.100

1 page




PSMN015-100B pdf
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PSMN015-100B, PSMN015-100P
Drain current, ID (A)
80
VDS > ID X RDS(ON)
70
60
50
40
30 175 C
20
Tj = 25 C
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
Transconductance, gfs (S)
80
70
Tj = 25 C
60
50
VDS > ID X RDS(ON)
175 C
40
30
20
10
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
Drain current, ID (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
Normalised On-state Resistance
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.9. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
Threshold Voltage, VGS(TO) (V)
4.5
4 maximum
3.5
3 typical
2.5
2 minimum
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1.0E-01 Drain current, ID (A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
ID = f(VGS); Tj = 25 ˚C
5
Capacitances, Ciss, Coss, Crss (pF)
10000
Ciss
1000
Coss
Crss
100
0.1
1 10
Drain-Source Voltage, VDS (V)
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1999
5
Rev 1.100

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet PSMN015-100B.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
PSMN015-100BN-channel TrenchMOS transistorPhilips
Philips
PSMN015-100PN-channel TrenchMOS transistorPhilips
Philips

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar