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NTP125N02R の電気的特性と機能

NTP125N02RのメーカーはON Semiconductorです、この部品の機能は「Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK」です。


製品の詳細 ( Datasheet PDF )

部品番号 NTP125N02R
部品説明 Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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NTP125N02R Datasheet, NTP125N02R PDF,ピン配置, 機能
NTB125N02R, NTP125N02R
Power MOSFET
125 A, 24 V N−Channel
TO−220, D2PAK
Features
Planar HD3e Process for Fast Switching Performance
Body Diode for Low trr and Qrr and Optimized for Synchronous
Operation
Low Ciss to Minimize Driver Loss
Optimized Qgd and RDS(on) for Shoot−through Protection
Low Gate Charge
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current −
Continuous @ TC = 25°C, Chip
Continuous @ TC = 25°C, Limited by Package
Continuous @ TA = 25°C, Limited by Wires
Single Pulse (tp = 10 ms)
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
RqJC
PD
ID
ID
ID
ID
24
±20
1.1
113.6
Vdc
Vdc
°C/W
W
125
120.5
95
250
A
A
A
A
RqJA
PD
ID
46 °C/W
2.72 W
18.6 A
RqJA
PD
ID
TJ, Tstg
63 °C/W
1.98 W
15.9 A
−55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk,
L = 1 mH, RG = 25 W)
Maximum Lead Temperature for Soldering
Purposes, 1/8from Case for 10 Seconds
EAS 120 mJ
TL 260 °C
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
PIN ASSIGNMENT
PIN FUNCTION
1 Gate
2 Drain
3 Source
4 Drain
http://onsemi.com
125 AMPERES, 24 VOLTS
RDS(on) = 3.7 mW (Typ)
D
G
S
MARKING
DIAGRAMS
4 TO−220AB
CASE 221A 125N2R
STYLE 5
YWW
123
4 D2PAK
125N2
CASE 418AA
YWW
2 STYLE 2
13
125N2 = Specific Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
NTB125N02R
NTB125N02RT4
NTP125N02R
Package
D2PAK
D2PAK
TO−220AB
Shipping
50 Units/Rail
800/Tape & Reel
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 4
1
Publication Order Number:
NTB125N02R/D

1 Page





NTP125N02R pdf, ピン配列
NTB125N02R, NTP125N02R
200
4.0 V
4.5 V
160
5.0 V
6.0 V
120 8.0 V
10 V
80
40
3.5 V
3.0 V
VGS = 2.5 V
0
0 2 4 6 8 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
200
VDS 10 V
160
120
80
TJ = 125°C
40
TJ = 25°C
TJ = −55°C
0
0 0.8 1.6 2.4 3.2 4.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.01
VGS = 10 V
0.01
VGS = 4.5 V
0.008
0.008
TJ = 125°C
0.006
0.004
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.006
0.004
TJ = 25°C
TJ = −55°C
0.002
0 40 80 120 160 200
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.002
0 40 80 120 160 200
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
1.8
ID = 55 A
1.6 VGS = 4.5 V
1.4
1.2
100,000
VGS = 0 V
10,000
1000
TJ = 150°C
TJ = 125°C
1.0
0.8
0.6
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
TJ = 100°C
100
10
0 4.0 8.0 12 16 20 24
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
3


3Pages


NTP125N02R 電子部品, 半導体
NTB125N02R, NTP125N02R
PACKAGE DIMENSIONS
D2PAK
CASE 418AA−01
ISSUE O
C
E
−B−
V
W
4
123
S
−T−
SEATING
PLANE
G
VARIABLE
CONFIGURATION
ZONE
K
D 3 PL
0.13 (0.005) M T B M
A
W
J
U
M MM
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.036
E 0.045 0.055
F 0.310 −−−
G 0.100 BSC
J 0.018 0.025
K 0.090 0.110
M 0.280 −−−
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.92
1.14 1.40
7.87 −−−
2.54 BSC
0.46 0.64
2.29 2.79
7.11 −−−
14.60 15.88
1.14 1.40
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
F
VIEW W−W
1
F
VIEW W−W
2
F
VIEW W−W
3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NTB125N02R/D

6 Page



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部品番号部品説明メーカ
NTP125N02R

Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK

ON Semiconductor
ON Semiconductor
NTP125N02R

Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK

ON Semiconductor
ON Semiconductor


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