DataSheet.jp

PDF NE5520279A-T1 Data sheet ( 特性 )

部品番号 NE5520279A-T1
部品説明 NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
メーカ NEC
ロゴ NEC ロゴ 

このページの下部にプレビューとNE5520279A-T1ダウンロード(pdfファイル)リンクがあります。

Total 7 pages

No Preview Available !

NE5520279A-T1 Datasheet, NE5520279A-T1 PDF,ピン配置, 機能
NEC'S 3.2 V, 2 W, L&S BAND NE5520279A
MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE:
5.7x5.7x1.1 mm MAX
• HIGH OUTPUT POWER:
+32 dBm TYP
• HIGH LINEAR GAIN:
10 dB TYP @ 1.8 GHz
• HIGH POWER ADDED EFFICIENCY:
45% TYP at 1.8 GHz
• SINGLE SUPPLY:
2.8 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 MAX.
(Bottom View)
1.5±0.2
Source
Source
Gate
Drain
Gate
Drain
0.4±0.15
5.7 MAX.
0.8 MAX.
3.6±0.2
DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the power ampliÞer
for mobile and Þxed wireless applications. Die are manu-
factured using NEC's NEWMOS technology (NEC's 0.6 µm
WSi gate lateral MOSFET) and housed in a surface mount
package.
APPLICATIONS
• DIGITAL CELLULAR PHONES:
3.2 V DCS1800 Handsets
• 0.7-2.5 GHz FIXED WIRELESS ACCESS
• W-LAN
• SHORT RANGE WIRELESS
• RETAIL BUSINESS RADIO
• SPECIAL MOBILE RADIO
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
UNITS
POUT Output Power
dBm
GL Linear Gain
dB
ηADD Power Added EfÞciency
%
ID Drain Current
mA
IGSS Gate-to-Source Leakage Current
nA
IDSS Saturated Drain Current
(Zero Gate Voltage Drain Current)
nA
VTH Gate Threshold Voltage
V
gm Transconductance
S
BVDSS Drain-to-Source Breakdown Voltage
V
RTH Thermal Resistance
°C/W
NE5520279A
79A
MIN TYP MAX
30.5 32.0
10
40 45
800
100
100
1.0 1.4
1.3
15 18
1.9
8
Notes:
1. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2. Pin = 5 dBm
TEST CONDITIONS
f = 1.8 GHz, VDS = 3.2 V,
IDSQ = 700 mA, PIN = 25 dBm, except
PIN = 5 dBm for Linear Gain
VGS = 5.0 V
VDS = 6.0 V
VDS = 3.5 V, IDS = 1 mA
VDS = 3.5 V, IDS = 700 mA
IDSS = 10 µA
Channel-to-Case
California Eastern Laboratories

1 Page







ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ NE5520279A-T1.PDF ]


共有リンク

Link :


おすすめデータシート

部品番号部品説明メーカ
NE5520279A-T1

NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET

NEC
NEC


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap