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PDF NDH8503N Data sheet ( Hoja de datos )
| Número de pieza | NDH8503N | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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NDH8503N
Dual N-Channel Enhancement Mode Field Effect Transistor
May 1997
General Description
SuperSOTTM-8 N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management,
and other battery powered circuits where fast switching, and
low in-line power loss are needed in a very small outline surface
mount package.
Features
3.8 A, 30 V. RDS(ON) = 0.033 Ω @ VGS = 10 V
RDS(ON) = 0.05 Ω @ VGS = 4.5 V.
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
____________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1)
PD Maximum Power Dissipation
(Note 1 )
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
NDH8503N
30
±20
3.8
10.5
0.8
-55 to 150
156
40
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH8503N Rev.C
1 page  
Typical Electrical Characteristics
1.12
1.08
I = 250µA
D
1.04
1
0.96
0.92
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation with
Temperature.
15
5 VGS =0V
1
0 .1
TJ = 125°C
25°C
-55°C
0 .0 1
0 .0 0 1
0 .0 0 0 1
0
0 .2 0 .4 0.6 0 .8
1
V SD, BODY DIODE FORWARD VOLTAGE (V)
1 .2
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
1500
1000
800
5 0 0 Ciss
3 0 0 Coss
200
100
50
0 .1
f = 1 MHz
VGS = 0V
Crss
0 .2 0 .5 1
35
10
V , DRAIN TO SOURCE VOLTAGE (V)
DS
30
Figure 9. Capacitance Characteristics.
10
ID = 3.8A
8
6
VDS = 10V
20V
15V
4
2
0
0 5 10 15
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
20
VIN
VGS
RGEN
G
VDD
RL
D
VOUT
DUT
S
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDH8503N Rev.C
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDH8503N.PDF ] | |
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