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PDF NDH8320C Data sheet ( Hoja de datos )
| Número de pieza | NDH8320C | |
| Descripción | Dual N & P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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December 1996
NDH8320C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
N-Channel 3 A, 20 V, RDS(ON)=0.06 Ω @ VGS=4.5 V
RDS(ON)=0.075 Ω @ VGS=2.7 V P-Channel -2A, -20V,
RDS(ON)=0.13 Ω @ VGS=-4.5 V
RDS(ON)=0.19 Ω @ VGS=-2.7 V.
Proprietary SuperSOTTM-8 package design using copper lead
frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
___________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings
Symbol Parameter
TA= 25°C unless otherwise noted
N-Channel
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1)
20
8
3
15
PD Power Dissipation for Single Operation
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1)
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
0.8
-55 to 150
156
40
P-Channel
-20
-8
-2
-10
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH8320C Rev.B
1 page  
Typical Electrical Characteristics: N-Channel (continued)
1.15
ID = 250µA
1.1
1.05
1
0.95
0.9
-50
-25 0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
10
5
VGS =0V
1
TJ = 125°C
0.1
25°C
0.01 -55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
V , BODY DIODE FORWARD VOLTAGE (V)
SD
1.2
Figure 7. N-Channel Breakdown Voltage
Variation with Temperature.
Figure 8. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature.
1200
800
500
300
200
Ciss
Coss
100
40
0 .1
f = 1 MHz
VGS = 0V
0 .2 0 .5 1
35
VDS , DRAIN TO SOURCE VOLTAGE (V)
Crss
10
20
Figure 9. N-Channel Capacitance Characteristics.
20
V DS = 5V
16
12
8
TJ = -55°C
25°C
125°C
4
0
02468
ID , DRAIN CURRENT (A)
10
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
5
ID = 3A
4
3
VDS = 5V
10
15V
2
1
0
0 2 4 6 8 10 12
Q g , GATE CHARGE (nC)
Figure 10. N-Channel Gate Charge Characteristics.
NDH8320C Rev.B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NDH8320C.PDF ] | |
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