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PDF NDH831N Data sheet ( Hoja de datos )
| Número de pieza | NDH831N | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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July 1996
NDH831N
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and portable electronics where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
5.8A, 20V. RDS(ON) = 0.03Ω @ VGS = 4.5V
RDS(ON) = 0.04Ω @ VGS = 2.7V.
High density cell design for extremely low RDS(ON).
Enhanced SuperSOTTM-8 small outline surface mount
package with high power and current handling capability.
____________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1c)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDH831N
20
8
5.8
20
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
NDH831N Rev. D
1 page  
Typical Electrical Characteristics
1.12
1.08
ID = 250µA
1.04
1
0.96
0.92
-50 -25 0 25 50 75 100 125
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
150
30
10 V GS = 0V
5
1
TJ = 125°C
25°C
0.1 -55°C
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
3000
2000
1000
500
C iss
C oss
300
200
100
0.1
f = 1 MHz
V GS = 0V
C rss
0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20
Figure 9. Capacitance Characteristics.
5
ID = 5.8A
4
3
2
1
0
05
VDS = 5V
15V
10V
10 15
Q g , GATE CHARGE (nC)
20
25
Figure 10. Gate Charge Characteristics.
VIN
VGS
RGEN
G
VDD
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 12. Switching Waveforms
NDH831N Rev. D
5 Page | ||
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| PDF Descargar | [ Datasheet NDH831N.PDF ] | |
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