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PDF MMST4126 Data sheet ( Hoja de datos )
| Número de pieza | MMST4126 | |
| Descripción | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
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MMST4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMST4124)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
A
C
BC
BE
G
H
K
J
DF
L
C
BE
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
M H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α 0° 8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj, TSTG
Value
-25
-25
-4.0
-200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
Cobo
Cibo
hfe
fT
NF
Min Max Unit
Test Condition
-25 ⎯
-25 ⎯
-4.0 ⎯
⎯ -50
⎯ -50
V IC = -10μA, IE = 0
V IC = -1.0mA, IB = 0
V IE = -10μA, IC = 0
nA VCB = -20V, IE = 0V
nA VEB = -3.0V, IC = 0V
120 360
60 ⎯
⎯ -0.40
⎯ -0.95
⎯ IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
V IC = -50mA, IB = -5.0mA
V IC = -50mA, IB = -5.0mA
⎯ 4.5
pF VCB = -5.0V, f = 1.0MHz, IE = 0
⎯ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0
120 480
⎯ VCE = 1.0V, IC = -2.0mA, f = 1.0kHz
250 ⎯ MHz VCE = -20V, IC = -10mA, f = 100MHz
⎯
4.0
dB VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30161 Rev. 7 - 2
1 of 3
www.diodes.com
MMST4126
© Diodes Incorporated
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