|
|
MMBT3906LのメーカーはONです、この部品の機能は「General Purpose Transistor」です。 |
部品番号 | MMBT3906L |
| |
部品説明 | General Purpose Transistor | ||
メーカ | ON | ||
ロゴ | |||
このページの下部にプレビューとMMBT3906Lダウンロード(pdfファイル)リンクがあります。 Total 7 pages
MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
ICM
Value
−40
−40
−5.0
−200
−800
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @ TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
2A M G
G
1
2A = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package Shipping†
MMBT3906LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT3906LT3G
SMMBT3906LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
3,000 / Tape &
Reel
SMMBT3906LT3G SOT−23 10,000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 11
1
Publication Order Number:
MMBT3906LT1/D
1 Page +0.5 V
10.6 V
MMBT3906L, SMMBT3906L
3V
< 1 ns
10 k
275
+9.1 V
0
< 1 ns
10 k
3V
275
CS < 4 pF*
1N916
CS < 4 pF*
300 ns
DUTY CYCLE = 2%
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
10
7.0
5.0
3.0
2.0
1.0
0.1
TYPICAL TRANSIENT CHARACTERISTICS
Cobo
Cibo
TJ = 25°C
TJ = 125°C
5000
3000
2000
VCC = 40 V
IC/IB = 10
1000
700
500
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
Figure 3. Capacitance
20 30 40
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
200
500
300
200
100
70
50
30
20
10
7
5
1.0
IC/IB = 10
tr @ VCC = 3.0 V
15 V
40 V
td @ VOB = 0 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
500
300
200
100
70
50
30
20
10
7
5
1.0
IC/IB = 20
VCC = 40 V
IB1 = IB2
IC/IB = 10
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Fall Time
200
http://onsemi.com
3
3Pages MMBT3906L, SMMBT3906L
0.50
0.45
0.40
0.35
0.30
IC/IB = 10
150°C
25°C
−55°C
0.25
0.20
0.15
0.10
0.05
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
1
1.4
VCE = 1 V
1.2
1.4
IC/IB = 10
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
1000
VCE = 2 V
TA = 25°C
1.0
−55°C
0.8
25°C
0.6
100
0.4 150°C
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 17. Base Emitter Voltage vs. Collector
Current
1.0
0.5 qVC FOR VCE(sat)
0
- 0.5
- 1.0
- 1.5 qVB FOR VBE(sat)
+25°C TO +125°C
- 55°C TO +25°C
+25°C TO +125°C
- 55°C TO +25°C
- 2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 19. Temperature Coefficients
10
0.1
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 18. Current Gain Bandwidth vs.
Collector Current
1 1 s 1 ms
100 ms
10 ms
Thermal Limit
0.1
0.01
Single Pulse Test
0.001 @ TA = 25°C
0.01 0.1
1
10
VCE (Vdc)
Figure 20. Safe Operating Area
100
http://onsemi.com
6
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ MMBT3906L データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MMBT3906 | Silicon PNP transistor | BLUE ROCKET ELECTRONICS |
MMBT3906 | PNP switching transistor | Philipss |
MMBT3906 | SMALL SIGNAL PNP TRANSISTOR | STMicroelectronics |
MMBT3906 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | TRSYS |