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MMBT2222AのメーカーはComchip Technologyです、この部品の機能は「Small Signal Transistor (NPN)」です。 |
部品番号 | MMBT2222A |
| |
部品説明 | Small Signal Transistor (NPN) | ||
メーカ | Comchip Technology | ||
ロゴ | |||
このページの下部にプレビューとMMBT2222Aダウンロード(pdfファイル)リンクがあります。 Total 3 pages
Small Signal Transistor (NPN)
MMBT2222A
Features
NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
COMCHIP
www.comchiptech.com
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
3
Mounting Pad Layout
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.037 (0.95)
12
.037(0.95) .037(0.95)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO 6.0 V
Collector Current
Power Dissipation
Power Dissipation
on FR-5 Board(1) TA = 25°C
Derate above 25°C
on Alumina Substrate(2) TA = 25°C
Derate above 25°C
IC
Ptot
Ptot
600 mA
225 mW
1.8 mW/°C
300 mW
2.4 mW/°C
Thermal Resistance Junction
to Ambient Air
FR-5 Board
Alumina Substrate
RΘJA
556
417
°C/W
Junction Temperature
Tj 150 °C
Storage Temperature Range
TS
–55 to +150
°C
Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Page 1
1 Page Small Signal Transistor (NPN)
COMCHIP
www.comchiptech.com
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Collector Base Time Constant
rb’CC
IE = 20 mA, VCB = 20 V,
f = 31.8 MHz
—
— 150 ps
Delay Time (see fig. 1)
td
IB1 = 15 mA, IC = 150 mA,
VCC = 30V, VBE = -0.5 V
—
—
10
ns
Rise Time (see fig. 1)
tr
IB1 = 15 mA, IC = 150 mA,
VCC = 30V, VBE = -0.5 V
—
—
25
ns
Storage Time (see fig. 2)
ts
IB1 = IB2 = 15 mA,
IC = 150 mA, VCC = 30V
—
— 225 ns
Fall Time (see fig. 2)
tf
IB1 = IB2 = 15 mA,
IC = 150 mA, VCC = 30V
—
—
60
ns
Switching Time Equivalent Test Circuit
Figure 1. Turn-ON Time
+16 V
0
-2 V
1.0 to 100 µs, DUTY CYCLE ≈ 2%
< 2 ns
1kΩ
+30V
200Ω
CS* < 10 pF
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
Figure 2. Turn-OFF Time
+16 V
0
-14 V
1.0 to 100 µs, DUTY CYCLE ≈ 2%
< 20 ns
1kΩ
-4 V
+30V
200Ω
CS* < 10 pF
Page 3
3Pages | |||
ページ | 合計 : 3 ページ | ||
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