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NES2427P-60 の電気的特性と機能

NES2427P-60のメーカーはNECです、この部品の機能は「60 W S-BAND PUSH-PULL POWER GaAs MES FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 NES2427P-60
部品説明 60 W S-BAND PUSH-PULL POWER GaAs MES FET
メーカ NEC
ロゴ NEC ロゴ 




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NES2427P-60 Datasheet, NES2427P-60 PDF,ピン配置, 機能
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES2427P-60
60 W S-BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for
MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high
linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 µm
Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal
characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• VDS = 10.0 V operation
• High output power: PO (1 dB) = 60 W TYP.
• High linear gain: GL = 12.0 dB TYP.
• High power added efficiency: ηadd = 35 % TYP. @ VDS = 10.0 V, IDset = 12.0 A (total), f = 2.50, 2.70 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES2427P-60
Package
T-92
Supplying Form
ESD protective envelope
Remark To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14997EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan
©
2000

1 Page





NES2427P-60 pdf, ピン配列
NES2427P-60
TYPICAL CHARACTERISTICS (TA = +25 °C)
f = 2.50 GHz
OUTPUT POWER, POWER ADDED
EFFICIENCY vs. INPUT POWER
55
VDS = 10.0 V, f = 2.50 GHz (1 tone)
IDset = 12.0 A (RF OFF), Rg = 2.5
50
Pout
60
50
45 40
ηadd
40 30
35 20
30 10
25 0
10 15 20 25 30 35 40 45
Input Power Pin (dBm)
DRAIN CURRENT, GATE CURRENT
vs. INPUT POWER
20
VDS = 10.0 V, f = 2.50 GHz (1 tone)
IDset = 12.0 A (RF OFF), Rg = 2.5
18
120
100
16 80
ID
14 60
12 40
10 20
IG
80
6 –20
10 15 20 25 30 35 40 45
Input Power Pin (dBm)
3RD ORDER INTERMODULATION
DISTORTION, DRAIN CURRENT
vs. 2 TONES OUTPUT POWER
0
VDS = 10.0 V, f = 2.50 GHz (2 tones)
–10 IDset = 12.0 A (RF OFF), Rg = 2.5
ID
16
14
–20 12
–30 10
–40 8
IM3
–50 6
–60 4
–70
20
25 30 35 40 45
2 tones Output Power Pout (dBm)
2
50
Remark The graphs indicate nominal characteristics.
f = 2.70 GHz
OUTPUT POWER, POWER ADDED
EFFICIENCY vs. INPUT POWER
55
VDS = 10.0 V, f = 2.70 GHz (1 tone)
IDset = 12.0 A (RF OFF), Rg = 2.5
50
Pout
60
50
45 40
ηadd
40 30
35 20
30 10
25 0
10 15 20 25 30 35 40 45
Input Power Pin (dBm)
DRAIN CURRENT, GATE CURRENT
vs. INPUT POWER
20
VDS = 10.0 V, f = 2.70 GHz (1 tone)
IDset = 12.0 A (RF OFF), Rg = 2.5
18
120
100
16 80
ID
14 60
12 40
10 20
IG
80
6 –20
10 15 20 25 30 35 40 45
Input Power Pin (dBm)
3RD ORDER INTERMODULATION
DISTORTION, DRAIN CURRENT
vs. 2 TONES OUTPUT POWER
0
VDS = 10.0 V, f = 2.70 GHz (2 tones)
–10 IDset = 12.0 A (RF OFF), Rg = 2.5
ID
16
14
–20 12
–30 10
–40
–50
–60
–70
20
IM3
25 30 35 40 45
2 tones Output Power Pout (dBm)
8
6
4
2
50
Preliminary Data Sheet P14997EJ1V0DS00
3


3Pages


NES2427P-60 電子部品, 半導体
[MEMO]
NES2427P-60
6 Preliminary Data Sheet P14997EJ1V0DS00

6 Page



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部品番号部品説明メーカ
NES2427P-60

60 W S-BAND PUSH-PULL POWER GaAs MES FET

NEC
NEC


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