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PDF MJF6388 Data sheet ( Hoja de datos )

Número de pieza MJF6388
Descripción COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



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No Preview Available ! MJF6388 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF6388/D
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general–purpose amplifiers and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
Isolated Overmold Package, TO–220 Type
Electrically Similar to the Popular 2N6388, 2N6668, TIP102 and TIP107
100 VCEO(sus)
10 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain — 1000 (Min) @ IC = 5.0 Adc
High Isolation Voltage (up to 4500 VRMS)
Case 221D is UL Recognized at 3500 VRMS: File #E69369
NPN
MJF6388*
PNP
MJF6668*
*Motorola Preferred Devices
COMPLEMENTARY
SILICON
POWER DARLINGTONS
10 AMPERES
100 VOLTS
40 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(for 1 sec, R.H. < 30%, TA = 25_C)
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorCurrent — Continuous
— Peak(2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purpose
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Proper strike and creepage distance must be provided.
v(2) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
Test No. 1 Per Figure 14
Test No. 2 Per Figure 15
Test No. 3 Per Figure 16
Symbol
VCEO
VCB
VEB
VISOL
IC
IB
PD
PD
TJ, Tstg
Symbol
RθJC
RθJA
TL
CASE 221D–02
UL RECOGNIZED
Value
100
100
5.0
4500
3500
1500
10
15
1.0
40
0.31
2.0
0.016
– 65 to + 150
Unit
Vdc
Vdc
Vdc
V
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
Max
3.2
62.5
260
Unit
_C/W
_C/W
_C
* Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device
mounted on a heatsink, thermal grease applied and a mounting torque of 6 to 8 inSlbs.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

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MJF6388 pdf
MJF6388 MJF6668
NPN
MJF6388
PNP
MJF6668
300 300
TJ = 25°C
TJ = 25°C
200 200
100 Cob 100 Cib Cob
70
Cib
50
70
50
30
0.1 0.2
0.5 1 2
5 10 20
VR, REVERSE VOLTAGE (VOLTS)
50 100
30
0.1 0.2
Figure 8. Typical Capacitance
0.5 1 2
5 10 20
VR, REVERSE VOLTAGE (VOLTS)
50 100
20,000
10,000
5000
3000
2000
1000
500
300
200
0.1
TJ = 150°C
25°C
– 55°C
VCE = 4 V
20,000
10,000
7000
5000
3000
2000
1000
700
500
TJ = 150°C
25°C
– 55°C
VCE = 4 V
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMP)
5 7 10
300
200
0.1
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMP)
5
Figure 9. Typical DC Current Gain
7 10
3
2.6 IC = 2 A 4 A
2.2
6A
TJ = 25°C
3
2.6
IC = 2 A
4A
2.2
TJ = 25°C
6A
1.8 1.8
1.4 1.4
1
0.3 0.5 0.7 1
23
5 7 10
IB, BASE CURRENT (mA)
20 30
1
0.3 0.5 0.7 1
23
5 7 10
IB, BASE CURRENT (mA)
Figure 10. Typical Collector Saturation Region
20 30
Motorola Bipolar Power Transistor Device Data
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