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PDF MJF18002 Data sheet ( Hoja de datos )
| Número de pieza | MJF18002 | |
| Descripción | POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18002/D
™Designer's Data Sheet
SWITCHMODE™
NPN Bipolar Power Transistor
For Switching Power Supply Applications
MJE18002*
MJF18002*
*Motorola Preferred Device
The MJE/MJF18002 have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Tight Parametric Distributions are Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• MJF18002, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
POWER TRANSISTOR
2.0 AMPERES
1000 VOLTS
25 and 50 WATTS
MAXIMUM RATINGS
Rating
Symbol MJE18002 MJF18002 Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 1
Test No. 2 Per Fig. 2
Test No. 3 Per Fig. 3
(TC = 25°C)
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
PD
450
1000
9.0
2.0
5.0
1.0
2.0
— 4500
— 3500
— 1500
50 25
0.4 0.2
Vdc
Vdc
Vdc
Adc
Adc
V
Watts
W/°C
CASE 221A–06
TO–220AB
MJE18002
Operating and Storage Temperature
THERMAL CHARACTERISTICS
TJ, Tstg
– 65 to 150
°C
Rating
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Symbol
RθJC
RθJA
TL
MJE18002 MJF18002
2.5 5.0
62.5 62.5
260
Unit
°C/W
°C
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF18002
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus) 450
—
— Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
— — 100 µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 800 V, VEB = 0)
TC = 125°C
TC = 125°C
ICES
— — 100 µAdc
— — 500
— — 100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(2) Proper strike and creepage distance must be provided.
IEBO
— — 100 µAdc
(continued)
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
MJE18002 MJF18002
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
180 250
160
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
230
210
IC = 1 A
140
LC = 200 µH
190
IC = 0.4 A
120
170
150
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
100
80 TJ = 25°C
TJ = 125°C
IC = 1 A
130
110 IC = 0.4 A
90 TJ = 25°C
70 TJ = 125°C
60
55 66 77 88 99 1100 1111 1122 1133 1144 1155
hFE, FORCED GAIN
50
55 6 77 8 9 10 111 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
10.00
5 ms
DC (MJE18002)
1.00
DC (MJF18002)
GUARANTEED SAFE OPERATING AREA INFORMATION
1 ms 50 µs 10 µs 1 µs
2.5
2.0
1.5
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 µH
1.0
0.10
0.5 VBE(off) = 0.5 V
0.01
1100
0V
–1.5 V
0
110000 11000000 0 200 400 600 880000 1000 1200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe
Operating Area
There are two limitations on the power handling ability of a
1.0 transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
SECOND
the transistor that must be observed for reliable operation;
0.8
BREAKDOWN
i.e., the transistor must not be subjected to greater dissipa-
DERATING
tion than the curves indicate. The data of Figure 15 is based
0.6
on TC = 25°C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC > 25°C. Second break-
0.4 down limitations do not derate the same as thermal limita-
tions. Allowable current at the voltages shown on Figure 15
may be found at any case temperature by using the appropri-
0.2
THERMAL
DERATING
ate curve on Figure 17. TJ(pk) may be calculated from the
data in Figures 20 and 21. At any case temperatures, thermal
limitations will reduce the power that can be handled to val-
0
20
40
60
80 100 112200 114400 160 ues less the limitations imposed by second breakdown. For
TC, CASE TEMPERATURE (°C)
inductive loads, high voltage and current must be sustained
simultaneously during turn–off with the base to emitter junc-
Figure 17. Forward Bias Power Derating
tion reverse biased. The safe level is specified as a reverse
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode.
Motorola Bipolar Power Transistor Device Data
5
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