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MJE127 の電気的特性と機能

MJE127のメーカーはONです、この部品の機能は「COMPLEMENTARY SILICON POWER DARLINGTONS」です。


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部品番号 MJE127
部品説明 COMPLEMENTARY SILICON POWER DARLINGTONS
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MJE127 Datasheet, MJE127 PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general–purpose amplifiers and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
Electrically Similar to the Popular TIP122 and TIP127
100 VCEO(sus)
5 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain — 2000 (Min) @ IC = 3 Adc
UL Recognized, File #E69369, to 3500 VRMS Isolation
Order this document
by MF122/D
MJNFP1N22
MJPFN1P27
COMPLEMENTARY
SILICON
POWER DARLINGTONS
5 AMPERES
100 VOLTS
30 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCASE 221D–02
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTO–220 TYPE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(for 1 sec, R.H. < 30%,
TA = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
Test No. 1 Per Fig. 14
Test No. 2 Per Fig. 15
Test No. 3 Per Fig. 16
VCEO
VCB
VEB
VISOL
IC
100
100
5
4500
3500
1500
5
8
Vdc
Vdc
Vdc
VRMS
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB 0.12 Adc
PD 30 Watts
0.24 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
Derate above 25_C
PD 2 Watts
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
RθJA
62.5 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case*
RθJC
4.1 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purpose
TL 260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on
a heatsink with thermal grease and a mounting torque of 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

1 Page





MJE127 pdf, ピン配列
TA TC
4 80
3 60
2 40
TC
1 20
TA
0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 3. Maximum Power Derating
MJF122 MJF127
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.1
0.2 0.3 0.5
SINGLE PULSE
RθJC(t) = r(t) RθJC
TJ(pk) – TC = P(pk) RθJC(t)
1 2 3 5 10 20 30 50 100 200 300 500 1K 2K 3K 5K 10K
t, TIME (ms)
Figure 4. Thermal Response
10
5
3 TJ = 150°C
2
100 µs
1 ms
dc 5 ms
1
0.5
0.3
0.2
0.1
1
CURRENT LIMIT
SECONDARY BREAKDOWN
LIMIT
THERMAL LIMIT @
TC = 25°C (SINGLE PULSE)
23 5
10 20 30 50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
Figure 5. Maximum Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown.
Motorola Bipolar Power Transistor Device Data
3


3Pages


MJE127 電子部品, 半導体
MJF122 MJF127
NPN
MJF122
COLLECTOR
PNP
MJF127
COLLECTOR
BASE
BASE
8 k 120
8 k 120
EMITTER
Figure 13. Darlington Schematic
EMITTER
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED
FULLY ISOLATED
CLIP PACKAGE
LEADS
MOUNTED
FULLY ISOLATED
CLIP
PACKAGE
0.107” MIN
LEADS
MOUNTED
FULLY ISOLATED
PACKAGE
0.107” MIN
LEADS
HEATSINK
0.110” MIN
HEATSINK
Figure 14. Clip Mounting Position
for Isolation Test Number 1
Figure 15. Clip Mounting Position
for Isolation Test Number 2
* Measurement made between leads and heatsink with all leads shorted together
HEATSINK
Figure 16. Screw Mounting Position
for Isolation Test Number 3
MOUNTING INFORMATION
4–40 SCREW
PLAIN WASHER
CLIP
HEATSINK
COMPRESSION WASHER
NUT HEATSINK
Figure 17. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-
stant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack-
age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
6 Motorola Bipolar Power Transistor Device Data

6 Page



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共有リンク

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部品番号部品説明メーカ
MJE12007

SILICON POWER TRANSISTOR

SavantIC
SavantIC
MJE122

COMPLEMENTARY SILICON POWER DARLINGTONS

ON
ON
MJE127

COMPLEMENTARY SILICON POWER DARLINGTONS

ON
ON


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