PDF MJE1123 Data sheet ( Hoja de datos )

Número de pieza	MJE1123
Descripción	PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE1123/D Bipolar Power PNP Low Dropout Regulator Transistor The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems and other applications. The MJE1123 is fully specified in the saturation region and exhibits the following main features: • High Gain Limits Base–Drive Losses to only 1–2% of Circuit Output Current • Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts • Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted.) Rating Symbol Collector–Emitter Sustaining Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Base Current — Continuous Total Power Dissipation @ TC = 25°C Derate above 25°C VCEO VCB VEB IC ICM IB PD Operating and Storage Temperature TJ, Tstg THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case° Thermal Resistance — Junction to Ambient° Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 seconds RθJC RθJA TL Value Unit 40 Vdc 50 Vdc 5.0 Vdc 4.0 Adc 8.0 4.0 Adc 75 Watts 0.6 W/°C – 65 to +150 °C °1.67° °70° 275 °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C Unless Otherwise Noted) Characteristic Symbol OFF CHARACTERISTICS* Collector–Emitter Sustaining Voltage (IC = 1.0 mA, I = 0) Emitter–Base Voltage (IE = 100 µA) Collector Cutoff Current (VCE = 7.0 Vdc, IB = 0) (VCE = 20 Vdc, IB = 0) VCEO(sus) VEBO ICEO ON CHARACTERISTICS* Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 20 mAdc) (IC = 1.0 Adc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 120 mAdc) (IC = 2.0 Adc, IB = 50 mAdc) (IC = 2.0 Adc, IB = 120 mAdc) (IC = 4.0 Adc, IB = 120 mAdc) * Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%. VCE(sat) Min 40 7.0 — — — — — — — — MJE1123 PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS CASE 221A–06 TO–220AB Typ Max Unit 65 — Vdc 11 — Vdc µAdc — 100 — 250 Vdc 0.16 0.30 0.13 0.25 0.10 0.20 0.25 0.40 0.20 0.35 0.45 0.75 (continued) ©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data 1 1 page PACKAGE DIMENSIONS MJE1123 Q H Z B 4 1 23 F T –T– SEATING PLANE C S A U K L V G N D R J CASE 221A–06 TO–220AB ISSUE Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES DIM MIN MAX A 0.570 0.620 B 0.380 0.405 C 0.160 0.190 D 0.025 0.035 F 0.142 0.147 G 0.095 0.105 H 0.110 0.155 J 0.018 0.025 K 0.500 0.562 L 0.045 0.060 N 0.190 0.210 Q 0.100 0.120 R 0.080 0.110 S 0.045 0.055 T 0.235 0.255 U 0.000 0.050 V 0.045 ––– Z ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR Motorola Bipolar Power Transistor Device Data 5 5 Page

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