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Número de pieza | MJE1123 | |
Descripción | PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE1123/D
Bipolar Power PNP
Low Dropout Regulator
Transistor
The MJE1123 is an applications specific device designed to provide low–dropout
linear regulation for switching–regulator post regulators, battery powered systems
and other applications. The MJE1123 is fully specified in the saturation region and
exhibits the following main features:
• High Gain Limits Base–Drive Losses to only 1–2% of Circuit Output Current
• Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts
• Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp
MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted.)
Rating
Symbol
Collector–Emitter Sustaining Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCEO
VCB
VEB
IC
ICM
IB
PD
Operating and Storage Temperature
TJ, Tstg
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case°
Thermal Resistance — Junction to Ambient°
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 seconds
RθJC
RθJA
TL
Value
Unit
40 Vdc
50 Vdc
5.0 Vdc
4.0 Adc
8.0
4.0 Adc
75 Watts
0.6 W/°C
– 65 to +150 °C
°1.67°
°70°
275
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C Unless Otherwise Noted)
Characteristic
Symbol
OFF CHARACTERISTICS*
Collector–Emitter Sustaining Voltage (IC = 1.0 mA, I = 0)
Emitter–Base Voltage (IE = 100 µA)
Collector Cutoff Current
(VCE = 7.0 Vdc, IB = 0)
(VCE = 20 Vdc, IB = 0)
VCEO(sus)
VEBO
ICEO
ON CHARACTERISTICS*
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 20 mAdc)
(IC = 1.0 Adc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 120 mAdc)
(IC = 2.0 Adc, IB = 50 mAdc)
(IC = 2.0 Adc, IB = 120 mAdc)
(IC = 4.0 Adc, IB = 120 mAdc)
* Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
VCE(sat)
Min
40
7.0
—
—
—
—
—
—
—
—
MJE1123
PNP LOW DROPOUT
TRANSISTOR
4.0 AMPERES
40 VOLTS
CASE 221A–06
TO–220AB
Typ Max Unit
65 — Vdc
11 — Vdc
µAdc
— 100
— 250
Vdc
0.16 0.30
0.13 0.25
0.10 0.20
0.25 0.40
0.20 0.35
0.45 0.75
(continued)
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page PACKAGE DIMENSIONS
MJE1123
Q
H
Z
B
4
1 23
F
T
–T–
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Motorola Bipolar Power Transistor Device Data
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MJE1123.PDF ] |
Número de pieza | Descripción | Fabricantes |
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