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IRLR120A PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR120A
部品説明 N-CHANNEL MOSFET
メーカ Fairchild
ロゴ Fairchild ロゴ 



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IRLR120A Datasheet, IRLR120A PDF,ピン配置, 機能
$GYDQFHG 3RZHU 026)(7
IRLR/U120A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 100V
Lower RDS(ON): 0.176(Typ.)
BVDSS = 100 V
RDS(on) = 0.22
ID = 8.4 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
100
8.4
5
29
±20
94
8.4
3.5
6.5
2.5
35
0.28
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.5
50
110
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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