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MCR100-8 の電気的特性と機能

MCR100-8のメーカーはMotorola Semiconductorsです、この部品の機能は「Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)」です。


製品の詳細 ( Datasheet PDF )

部品番号 MCR100-8
部品説明 Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




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MCR100-8 Datasheet, MCR100-8 PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package
which is readily adaptable for use in automatic insertion equipment.
Sensitive Gate Trigger Current — 200 µA Maximum
Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 125°C
Low Holding Current — 5 mA Maximum
Glass-Passivated Surface for Reliability and Uniformity
Order this document
by MCR100/D
MCR100
Series*
*Motorola preferred devices
SCRs
0.8 AMPERE RMS
100 thru 600 VOLTS
G
AK
K
G
A
CASE 29-04
(TO-226AA)
STYLE 10
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125°C, RGK = 1 k
MCR100-3
MCR100-4
MCR100-6
MCR100-8
Symbol
VDRM
and
VRRM
Value
100
200
400
600
Unit
Volts
Forward Current RMS (See Figures 1 & 2)
(All Conduction Angles)
IT(RMS)
0.8
Amps
Peak Forward Surge Current, TA = 25°C
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
10
0.415
Amps
A2s
Peak Gate Power — Forward, TA = 25°C
Average Gate Power — Forward, TA = 25°C
Peak Gate Current — Forward, TA = 25°C
(300 µs, 120 PPS)
PGM
PGF(AV)
IGFM
0.1
0.01
1
Watts
Watt
Amp
Peak Gate Voltage — Reverse
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
tLead Solder Temperature
( 1/16I from case, 10 s max)
VGRM
TJ
Tstg
5
–40 to +125
–40 to +150
+230
Volts
°C
°C
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1

1 Page





MCR100-8 pdf, ピン配列
PACKAGE DIMENSIONS
MCR100 Series
R
SEATING
PLANE
AB
P
L
F
K
XX
H
V
G
C
1
N
N
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
D
J
SECTION X–X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.022
F 0.016 0.019
G 0.045 0.055
H 0.095 0.105
J 0.015 0.020
K 0.500 –––
L 0.250 –––
N 0.080 0.105
P ––– 0.100
R 0.115 –––
V 0.135 –––
MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.41 0.55
0.41 0.48
1.15 1.39
2.42 2.66
0.39 0.50
12.70 –––
6.35 –––
2.04 2.66
––– 2.54
2.93 –––
3.43 –––
CASE 29-04
(TO–226AA)
Motorola Thyristor Device Data
3


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共有リンク

Link :


部品番号部品説明メーカ
MCR100-3

Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)

Motorola Semiconductors
Motorola Semiconductors
MCR100-3

SCR

Semtech
Semtech
MCR100-3

Sensitive Gate Silicon Controlled Rectifiers

ON Semiconductor
ON Semiconductor
MCR100-3

Small Signal Diode

Taiwan Semiconductor
Taiwan Semiconductor


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