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PDF MCH6614 Data sheet ( Hoja de datos )
| Número de pieza | MCH6614 | |
| Descripción | Ultrahigh-Speed Switching Applications | |
| Fabricantes | Sanyo | |
| Logotipo |  |
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Ordering number : ENN6795
MCH6614
N-Channel and P-Channel Silicon MOSFET
MCH6614
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
• The MCH6614 incorporates two elements that are an unit : mm
N-channel and a P-channel MOSFETs that feature low 2173
ON resistance and high-speed switching, thereby
enabling high-density mounting.
• Low ON-resistance.
• 2.5V drive.
0.3
65 4
[MCH6614]
0.15
12 3
0.65
2.0
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FN
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
SANYO : MCPH6
N-channel
P-channel
30 --30
±10 ±10
0.35 --0.4
1.4 --1.6
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Ratings
min typ max
Unit
30 V
10 µA
±10 µA
0.4 1.3 V
150 220
mS
2.9 3.7 Ω
3.7 5.2 Ω
6.4 12.8 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20101 TS IM TA-G2I90IM9 No.6795-1/6
1 page  
MCH6614
IF -- VSD
[Nch]
IF -- VSD
[Pch]
5
VGS=0
5
VGS=0
33
22
0.1
7
5
3
2
0.01
0.5
1000
7
5
3
2
100
7
5
3
2
0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
IT00037
[Nch]
VDD=15V
VGS=4V
td(off)
tf
tr
td(on)
10
0.01
100
7
5
3
2
23
5 7 0.1
2
Drain Current, ID -- A
IT00038
Ciss, Coss, Crss -- VDS [Nch]
f=1MHz
10
Ciss
7
5 Coss
3 Crss
2
1.0
0 2 4 6 8 10 12 14 16
Drain-to-Source Voltage, VDS -- V
10 VGS -- Qg
VDS=10V
9 ID=150mA
8
18 20
IT00039
[Nch]
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00040
--0.1
7
5
3
2
--0.01
--0.4
1000
7
5
3
2
100
7
5
3
2
--0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Diode Forward Voltage, VSD -- V
SW Time -- ID
IT00245
[Pch]
VDD= --15V
VGS= --4V
td(off)
tf
tr
td(on)
10
--0.01
100
7
5
3
2
10
7
5
3
2
23
5 7 --0.1
23
Drain Current, ID -- A
IT00246
Ciss, Coss, Crss -- VDS [Pch]
f=1MHz
Ciss
Coss
Crss
1.0
0
--5
--10 --15
--20 --25
--30
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
--10
VDS= --10V
--9 ID= --200mA
IT00247
[Pch]
--8
--7
--6
--5
--4
--3
--2
--1
0
0 0.5 1.0 1.5 2.0 2.5
Total Gate Charge, Qg -- nC
IT00248
No.6795-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCH6614.PDF ] | |
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