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PDF MDS80-1200 Data sheet ( 特性 )

部品番号 MDS80-1200
部品説明 DIODE / SCR MODULE
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 

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MDS80-1200 Datasheet, MDS80-1200 PDF,ピン配置, 機能
MDS35 / 50 / 80 Series
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
50-70-85
800 and 1200
50 and 100
Unit
A
V
mA
DESCRIPTION
Packaged in ISOTOP modules, the MDS Series is
based on the half-bridge SCR-diode configuration.
They are suitable for high power applications,
using phase controlled bridges, such as soft-start
circuits, welding equipment, motor speed
controller. The compactness of the ISOTOP
package allows high power density and optimized
power bus connections. Thanks to their internal
ceramic pad, they provide high voltage insulation
(2500V RMS), complying with UL standards (File
ref: E81734).
PIN CONNECTIONS
DIODE / SCR MODULE
ISOTOP®
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
IT(RMS)
IT(AV)
ITSM
IFSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
RMS on-state current
Average on-state current
(Single phase-circuit, 180° conduction angle per device)
Non repetitive surge peak on-state
current (Tj initial = 25°C)
tp = 8.3 ms
tp = 10 ms
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
F = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse SCR gate voltage
ISOTOP is a registred trademark of STMicroelectronics
December 2000 - Ed: 4
Value
35 50 80
50 70 85
Unit
A
Tc = 85°C
Tj = 25°C
Tj = 25°C
25 35 55
420 630 730
400 600 700
800 1800 2450
A
A
A2S
Tj = 125°C
50
A/µs
Tj = 125°C
Tj = 125°C
4
1
- 40 to + 150
- 40 to + 125
5
A
W
°C
V
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1 Page





MDS80-1200 pdf, ピン配列
THERMAL RESISTANCES
Symbol
Rth(j-c)
Junction to case (DC)
Parameter
PRODUCT SELECTOR
Part Number
MDS35-xxx
MDS50-xxx
MDS80-xxx
Voltage (xxx)
800 V
X
X
X
1200 V
X
X
X
ORDERING INFORMATION
SCR
MODULE
SERIES
OTHER INFORMATION
Part Number
Marking
MDS35-xxx
MSDS50-xxx
MDS80-xxx
MDS35-xxx
MDS50-xxx
MDS80-xxx
Note: xxx = voltage
CURRENT:
35: 50A
50: 70A
80: 85A
Weight
27.0 g
27.0 g
27.0 g
MDS35 / 50 / 80 Series
MDS35
MDS50
MDS80
Value
1.00
0.75
0.45
Unit
°C/W
Sensitivity
50 mA
50 mA
150 mA
Package
ISOTOPTM
VOLTAGE:
800: 800V
1200: 1200V
Base Quantity
10
10
10
Packing mode
Tube
Tube
Tube
3/7


3Pages


MDS80-1200 電子部品, 半導体
MDS35 / 50 / 80 Series
Fig. 7-1: On-state characteristics (thyristor or
diode, maximum values) (MDS35).
Fig. 7-2: On-state characteristics (thyristor or
diode, maximum values) (MDS50).
Fig. 7-3: On-state characteristics (thyristor or
diode, maximum values) (MDS80).
6/7

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