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PDF MDS35-800 Data sheet ( Hoja de datos )
| Número de pieza | MDS35-800 | |
| Descripción | DIODE / SCR MODULE | |
| Fabricantes | ST Microelectronics | |
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MDS35 / 50 / 80 Series
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
50-70-85
800 and 1200
50 and 100
Unit
A
V
mA
DESCRIPTION
Packaged in ISOTOP modules, the MDS Series is
based on the half-bridge SCR-diode configuration.
They are suitable for high power applications,
using phase controlled bridges, such as soft-start
circuits, welding equipment, motor speed
controller. The compactness of the ISOTOP
package allows high power density and optimized
power bus connections. Thanks to their internal
ceramic pad, they provide high voltage insulation
(2500V RMS), complying with UL standards (File
ref: E81734).
PIN CONNECTIONS
DIODE / SCR MODULE
ISOTOP®
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
IT(RMS)
IT(AV)
ITSM
IFSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
RMS on-state current
Average on-state current
(Single phase-circuit, 180° conduction angle per device)
Non repetitive surge peak on-state
current (Tj initial = 25°C)
tp = 8.3 ms
tp = 10 ms
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse SCR gate voltage
ISOTOP is a registred trademark of STMicroelectronics
December 2000 - Ed: 4
Value
35 50 80
50 70 85
Unit
A
Tc = 85°C
Tj = 25°C
Tj = 25°C
25 35 55
420 630 730
400 600 700
800 1800 2450
A
A
A2S
Tj = 125°C
50
A/µs
Tj = 125°C
Tj = 125°C
4
1
- 40 to + 150
- 40 to + 125
5
A
W
°C
V
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1 page  
MDS35 / 50 / 80 Series
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5-1: Surge peak on-state current versus
number of cycles (MDS35 and MDS50).
Fig. 5-2: Surge peak on-state current versus
number of cycles (MDS80).
Fig. 6-1: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t
(MDS35 and MDS50).
Fig. 6-2: Non repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t
(MDS80).
5/7
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MDS35-800.PDF ] | |
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